Datasheets - 单FET、MOSFET Vishay - 3
小节: "单FET、MOSFET"
制造商: "Vishay"
制造商
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse Magnachip MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon Wolfspeed系列
2N7000 2N7002 BS107KL BS170 BS250 BS250KL IRF510 IRF520 IRF530 IRF530S, SiHF530S IRF540 IRF640 IRF820 IRF840L IRF9510S IRF9540 IRF9610 IRFD010 IRFD012 IRFD110 IRFP140 IRFP22N60K IRFP240 IRFP31N50L, SiHFP31N50L IRFP450 IRFP460 IRFP9140 IRFP9240 IRFR9220 IRFR9310 IRFU9220 IRFU9310 IRFZ24 IRFZ44 IRL520, SiHL520 IRL540 IRLD024 IRLL110 IRLR024 IRLU024 IRLZ44 Si1012CR Si1012R Si1012X Si1308EDL SI1470DH SI2308DS Si2312CDS Si2334DS SI2337DS Si2342DS SI2369DS Si2399DS Si3430DV Si3457CDV Si4401BDY Si4401DDY SI4401DY Si4403CDY Si4421DY Si4435BDY Si4435DDY Si4435DY-REVA Si4435FDY Si4464DY Si4466DY SI4480EY Si4490DY SI7489DP Si7611DN Si8410DB Si8416DB Si8466EDB Si8802DB Si9407AEY Si9424BDY SiHF520 SiHF530 SiHF640 SiHF820 SiHF840L SIHF9510S SiHF9540 SiHFP450 SiHFR9220 SiHFR9310 SiHFU9220 SiHFU9310 SiHFZ44 SiHH068N60E SiHH070N60EF SiHLD024 SiHLL110 SiHLR024 SiHLU024 SiR846DP SiRA20DP SiRA99DP SiSF20DN SiSS22DN SiSS94DN SiZ240DT SiZF300DT SQD50N06-07L SQD50N06-09L SQJ211ELP SQJ264EP SQJ457EP SQJA80EP SQJA81EP SUB15P01-52 SUD19N20-90 SUD25N15-52 SUD50N04-8m8P SUM85N03-06P SUP15P01-52 SUP90P06-09L TN0200K TN2404K TN2404KL TP0610K TP0610KL TP0610L TP0610T VN0610L, VN10KLS, VN2222L VP0610L VP0610T VQ1000J VQ1000P搜索结果: 1,118 输出量: 41-60
视图: 清单 / 图片
汽车P通道80 V（DS）175°C MOSFET
功率MOSFET 不建议用于新设计，请使用SiHG16N50C
- 功率MOSFET 不建议用于新设计，请使用SiHG16N50C
- N沟道2.5V（GS）MOSFET 已淘汰，使用Si4116DY
功率MOSFET- 汽车P通道100 V（DS）175°C MOSFET
- EF系列快速体二极管功率MOSFET
汽车类双N通道60 V（DS）175°C MOSFET
双N沟道40 V（DS）MOSFET
N沟道200 V（DS）MOSFET
P通道30 V（DS）MOSFET
具有肖特基二极管的双N沟道30 V（DS）MOSFET- P通道60V（DS）MOSFET
- P通道20V（DS）MOSFET
共-漏极双N沟道60 V（S1-S2）MOSFET 特征 TrenchFET®Gen IV功率MOSFET 源极电阻极低 集成的共漏极n沟道MOSFET采用紧凑且耐热增强的封装
N通道20 V（DS）MOSFET TrenchFET®功率MOSFET 已通过100％汞测试- 汽车P通道60 V（DS）175°C MOSFET TrenchFET®功率MOSFET 符合AEC-Q101 经过100％的Rg和UIS测试 包装：PowerPAK SO-8L
N沟道60 V（DS）MOSFET TrenchFET®Gen IV功率MOSFET RDS极低-Qg品质因数（FOM） 调整为最低的RDS-Qoss FOM
功率MOSFET- 功率MOSFET
排序方式: 关联 / 日期