Datasheet Vishay TN0200K — 数据表

New Product TN0200K
Vishay Siliconix N-Channel 20-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY
VDS (V) rDS(on) (Ω) ID (A) 0.4 at VGS = 4.5 V 0.73 0.5 at VGS = 2.5 V 0.65 20 • TrenchFET® Power MOSFET
• ESD Protected: 4000 V RoHS
COMPLIANT APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers
• Battery Operated Systems, DC/DC Converters
• Solid-State Relays
• Load/Power Switching-Cell Phones, Pagers TO-236
(SOT-23) G D Marking Code: K2ywl 1
3 S D 100 Ω K2 = Part Number Code for TN0200K G y = Year Code
w = Week Code
l = Lot Traceability 2 Top View Ordering Information: TN0200K-T1-E3 (Lead (Pb)-free) S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C
TA = 70 °C a Pulsed Drain Current Continuous Source Current (Diode Conduction)b
TA = 25 °C Power Dissipationb TA = 70 °C Operating Junction and Storage Temperature Range ID V 0.73
0.58 IDM 4 IS 0.3 PD Unit 0.35
0.22 A W TJ, Tstg -55 to 150 Symbol Limit Unit RthJA 357 °C/W °C THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient b Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t ≤ 10 sec. …