Datasheets - MOSFET单晶体管

小节: "MOSFET单晶体管"
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  1. Datasheet Ampleon BLP2425M10S250PY
    Power LDMOS transistor 250 W LDMOS-based power transistor suitable for use in a variety of commercial and consumer cooking, industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz. The BLP2425M10S250P is designed ...
  2. Power LDMOS transistor 250 W LDMOS-based power transistor suitable for use in a variety of commercial and consumer cooking, industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz. The BLP2425M10S250P is designed ...
  3. 170 V,102 A增强型GaN功率晶体管
  4. 600V,aMOS5 TOLL,用于高密度,高可靠性SMPS
  1. 双P通道增强模式场效应晶体管
  2. 汽车类双N通道60 V(DS)175°C MOSFET
  3. Datasheet Vishay SQJ264EP-T1_GE3
    汽车类双N通道60 V(DS)175°C MOSFET
  4. HEXFET Power MOSFET
  5. 采用TO-220AB封装的55V单N沟道HEXFET功率MOSFET
  6. Datasheet International Rectifier IRF3205PBF
    采用TO-220AB封装的55V单N沟道HEXFET功率MOSFET
  7. 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装
  8. Datasheet Infineon IRF3205PBF
    55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装
  9. Datasheet Infineon IQE013N04LM6CGATMA1
    OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down center-gate package with industry leading RDS(on) The IQE013N04LM6CG extends the innovative Source-Down family with the 1.35mOhm, OptiMOS™ power MOSFET 40V in a 3.3x3.3 PQFN ...
  10. OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down center-gate package with industry leading RDS(on) The IQE013N04LM6CG extends the innovative Source-Down family with the 1.35mOhm, OptiMOS™ power MOSFET 40V in a 3.3x3.3 PQFN ...
  11. Datasheet Infineon IQE013N04LM6ATMA1
    OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down package with industry leading R DS(on) Infineon has extended its innovative Source-Down family with the IQE013N04LM6 1.35mOhm, 40V in a 3.3x3.3 PQFN package. This best-in-class power ...
  12. OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down package with industry leading R DS(on) Infineon has extended its innovative Source-Down family with the IQE013N04LM6 1.35mOhm, 40V in a 3.3x3.3 PQFN package. This best-in-class power ...
  13. 单P通道2.5V额定PowerTrench MOSFET
  14. N沟道MOSFET Zetex的新一代高密度MOSFET采用独特的结构,结合了低导通电阻和快速开关速度的优点。这使它们成为高效,低电压,电源管理应用的理想选择。
  15. N沟道MOSFET Zetex的新一代高密度MOSFET采用独特的结构,结合了低导通电阻和快速开关速度的优点。这使它们成为高效,低电压,电源管理应用的理想选择。
  16. N沟道MOSFET Zetex的新一代高密度MOSFET采用独特的结构,结合了低导通电阻和快速开关速度的优点。这使它们成为高效,低电压,电源管理应用的理想选择。