Datasheet Vishay Si2334DS — 数据表
| 制造商 | Vishay |
| 系列 | Si2334DS |
| 零件号 | Si2334DS |
N 沟道 30 V (DS) MOSFET
数据表
N-Channel 30 V (D-S) MOSFET
Si2334DS
Vishay Siliconix N-Channel 30 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
RDS(on) () ID (A)a 0.044 at VGS = 4.5 V 4.9 0.050 at VGS = 2.5 V 4.6 VDS (V)
30 • Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC Qg (Typ.)
3.7 nC APPLICATIONS
• DC/DC Converter for Portable Devices
• Load Switch TO-236
(SOT-23) D G 1
3 S D 2
G Top View
Si2334DS (PS)*
* Marking Code S Ordering Information: Si2334DS-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±8 TC = 25 °C
Continuous Drain Current (TJ = 150 °C) 3.9 ID TA = 25 °C 4.2b, c
3.4b, c TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C 1.4 IS TA = 25 °C 1.1b, c TC = 25 °C 1.7 TC = 70 °C 1.1 PD TA = 25 °C A 10 IDM W 1.3b, c
0.8b, c TA = 70 °C
Operating Junction and Storage Temperature Range V 4.9 TC = 70 °C Pulsed Drain Current Unit TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb, d t5s RthJA 80 100 Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75 Unit …