Datasheets - 单FET、MOSFET Infineon

小节: "单FET、MOSFET"
制造商: "Infineon"
搜索结果: 692 输出量: 1-20

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  1. Datasheet Infineon BSS316NH6327XTSA1
    N沟道小信号MOSFET,30V,SOT-23封装
  2. Datasheet Infineon BSC060P03NS3EGATMA1
    P-channel power MOSFET in PG-TDSON-8 package
  1. Datasheet Infineon BSC060N10NS3GATMA1
    100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS in PG-TDSON-8 package Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).
  2. The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage ...
  3. IGC033S101 是一款 100 V 常关型增强模式功率晶体管,采用小型 PQFN 3x5 封装,可实现高功率密度设计。凭借其低导通电阻,它是高要求高压大电流应用中可靠性能的理想选择。
  4. P-channel enhancement mode Field-Effect Transistor (FET), -30V, SOT-23 Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality ...
  5. Datasheet Infineon IRF4905STRLPBF
    采用 D2-Pak 封装的 -55V 单 P 通道 HEXFET 功率 MOSFET
  6. 400V N 沟道 HEXFET 晶体管 HEXFET 技术是 International Rectifier 的 HiRel 先进功率 MOSFET 晶体管系列的关键。这一最新“先进”设计采用高效的几何形状和独特的工艺,实现了:极低的导通电阻和高跨导。
  7. Datasheet Infineon IRL520NPbF
    采用 TO-220 封装的 100V 单 N 沟道功率 MOSFET IR MOSFET 系列功率 MOSFET 采用经过验证的硅工艺,为设计人员提供了广泛的器件组合,以支持各种应用,例如直流电机、逆变器、SMPS、照明、负载开关以及电池供电应用。这些器件可用于各种应用表面贴装和通孔封装具有行业标准尺寸,易于设计。
  8. 30V 单个 N 通道 Power MOSFET, 采用 I-PAK 封装 The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive ...
  9. 30V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装
  10. 30V Logic Level Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring ...
  11. Datasheet Infineon BSP89H6327XTSA1
    所有的小型单个 n 通道系列产品均适合汽车应用(2N7002 除外)。
  12. Datasheet Infineon IRF7389PBF
    30V 单个 N 通道和 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装
  13. Datasheet Infineon IRF7425PBF
    -20V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装
  14. Datasheet Infineon AUIRL7732S2TR
    40V 汽车级单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET SC封装,在低导通电阻下进行了优化,额定电流为58A。
  15. Datasheet Infineon IRF6775MTRPBF
    150V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MZ package The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring performance ...
  16. Datasheet Infineon IRF6665PBF
    100V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ SH package for Audio The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring ...
  17. Datasheet Infineon IRF3205PBF
    55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

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