Datasheet Infineon IRF9394M — 数据表

APPROVED (NOT RELEASED) IRF9394MPbF
DirectFETв„ў dual P-Channel Power MOSFET п‚‚пЂ 
Typical values (unless otherwise specified) Applications
пЃ¬ Isolation Switch for Input Power or Battery Application VDSS Features and Benefits
п‚џпЂ Environmentally Friendly Product
п‚џпЂ ROHS compliant, Halogen-Free
п‚џпЂ Dual Common-Drain P-Channel MOSFETs Provides High
Level of Integration and Very Low RDS(on) VGS RDS(on) RDS(on) -30V max В±20V max 5.3mпЃ—@-10V 8.5mпЃ—@-4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 32nC 15nC 3.2nC 62nC 23nC -1.8V В  В 
G G
S S D D
S S DirectFETв„ў ISOMETRIC MC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)п‚Ѓ
SQ SX ST MQ MX MT MP MC Description
The IRF9394MTRPbF combines the latest HEXFETВ® P-Channel Power MOSFET Silicon technology with the advanced
DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only
0.54 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB
assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is
followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to
maximize thermal transfer in power systems, improving previous best thermal resistance by 80%
Orderable Part Number В  Package Type В  IRF9394MTRPbF DirectFET Medium Can Standard Pack
Form
Quantity
Tape and Reel
4800 Absolute Maximum Ratings …