Datasheets - MOSFET单晶体管 International Rectifier - 2
小节: "MOSFET单晶体管"
制造商: "International Rectifier"
制造商
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon Wolfspeed系列
AUIRL7732S2TR IFR3205 IRF1010N IRF150 IRF3205 IRF5305 IRF5305PBF IRF5305S/L IRF5305S/LPBF IRF530N IRF530NPBF IRF530NS, IRF530NL IRF530NSPBF, IRF530NLPBF IRF540NL IRF540NS IRF6665 IRF6775M IRF7341 IRF7342 IRF7389 IRF740 IRF7425 IRF7832 IRF7832TRPBF IRF9130 IRF9510 IRF9510S IRF9530N IRF9Z24N IRFB/S/SL7730PbF IRFB/S/SL7734PbF IRFB/S/SL7787PbF IRFF9120 IRFH5406PBF IRFH7787PbF IRFR/U7740PbF IRFR/U7746PbF IRFS/SL7762PbF IRFS7730-7PPbF IRFS7734-7PPbF IRFZ44N IRFZ46N IRL3103PbF IRL3705N IRL540NPBF IRLR024N IRLU024N IRLZ34N搜索结果: 1,463 输出量: 21-40
视图: 清单 / 图片
- 功率MOSFET Vdss = -100V，Rds（on）= 1.2ohm，Id = -4.0A
- HEXFET功率MOSFET
- HEXFET功率MOSFET
- HEXFET功率MOSFET
- HEXFET功率MOSFET
HEXFET功率MOSFET- 采用TO-204AE封装的100V单N沟道Hi-Rel MOSFET
采用PQFN封装的60 V单N沟道HEXFET功率MOSFET
PB-IRF5305。采用TO-220AB封装的带引线的-55 V单P沟道HEXFET功率MOSFET。过时的
PB-IRF5305S。采用D2-Pak封装的带引线的-55 V单P通道HEXFET功率MOSFET。过时的- PB-IRF530N。采用TO-220AB封装的含铅100 V单N沟道HEXFET功率MOSFET。过时的
- 采用D2-Pak封装的带引线100 V单N沟道HEXFET功率MOSFET。 PB-IRF530NS。过时的
采用TO-220AB封装的-55 V单P沟道HEXFET功率MOSFET。 IRF5305
采用TO-262封装的-55 V单P沟道HEXFET功率MOSFET。 IRF5305L- 采用TO-220AB封装的100 V单N沟道HEXFET功率MOSFET。 IRF530N
- 采用TO-262封装的100 V单N沟道HEXFET功率MOSFET。 IRF530NL
- 75 V StrongIRFET HEXFET功率MOSFET
- 75 V StrongIRFET HEXFET功率MOSFET
- 75 V StrongIRFET HEXFET功率MOSFET
- 75 V StrongIRFET HEXFET功率MOSFET
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