Datasheets - 单FET、MOSFET JX Semiconductor
小节: "单FET、MOSFET"
制造商: "JX Semiconductor"
制造商
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics JX Semiconductor Littelfuse Magnachip MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba VBsemi Vishay Wayon Wolfspeed Youtai系列
JX3S0040090M搜索结果: 1 输出量: 1
视图: 清单 / 图片
900V N沟道SiC MOSFET，采用TO247-3封装 碳化硅 (SiC) MOSFET 采用全新技术，与硅相比，具有更优异的开关性能和更高的可靠性。此外，其低导通电阻和紧凑的芯片尺寸确保了低电容和低栅极电荷。因此，系统优势包括： 最高效率、更快的运行频率、更高的功率密度、更低的电磁干扰和更小的系统尺寸。