Datasheet JX3S0020120M (JX Semiconductor) - 9

JX3S0020120M 1200V, N-Channel, Silicon Carbide MOSFET Package Dimensions (mm) Package Type: TO-247-3L Mil imeters Inches Symbol Min. Type. Max. Min. Type. Max. Pin Symbol Description A
4.80 5.00 5.20 0.189 0.197 0.205 1 G Gate
A1
2.85 3.00 3.15 0.112 0.118 0.124 2 D Drain
b
1.16 1.22 1.27 0.046 0.048 0.050 3 S Source
b1
2.03 2.06 2.10 0.080 0.081 0.083 mb D mounting base; connected to drain
b2
3.03 3.06 3.10 0.119 0.120 0.122
C
0.55 0.60 0.65 0.022 0.024 0.026
D
20.80 21.00 21.20 0.819 0.827 0.835
D1
15.94 16.24 16.54 0.628 0.639 0.651
Note: D2
4.30 BSC 0.169 BSC 1. Al metal surfaces are Sn plated
e
5.44 BSC 0.214 BSC (matte), except area of cut.
E
15.95 16.15 16.35 0.628 0.636 0.644 2. Burr or mold flash size (0.5 mm)
E1
13.82 14.02 14.26 0.544 0.552 0.561 is not included in the dimensions.
L
34.65 35.05 35.45 1.364 1.380 1.396
L1
- - 3.86 - - 0.152
Q
5.85 5.95 6.05 0.230 0.234 0.238 ∅
P
3.45 3.60 3.75 0.136 0.142 0.148
Product Data Sheet
9
JX-3T04-27AA/2
Document Outline JX3S0020120M General Description Thermal Characteristics Typical Performance Figure 1 Output Characteristics (TJ=25 °C) Figure 3 Figure 2 Output Characteristics (TJ=175°C) Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Body Diode Characteristic at 25°C Figure 8 Gate Charge Characteristics Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Switching Energy vs. RG(ext) RG(ext)=2.5Ω Figure 15 Figure 16 Switching Times vs. RG(ext) Typical Performance Figure 17 Figure 18 Contact Info