Datasheet JX3S0020120M (JX Semiconductor) - 8

JX3S0020120M 1200V, N.Channel, Silicon Carbide MOSFET Typical Performance
1.000 1000 0.5 100
10μs
0.3 0.100
100μs
10 0.1
1ms
0.05
100ms
1 0.02 0.010 0.01 0.1 Single Pluse 0.001 0.01 1. E-06 1. E-05 1. E-04 1. E-03 1. E-02 1. E-01 1.E+00 0.1 1 10 100 1000
Time, tp (s) Drain-Source Voltage, VDS (V) Figure 17 Figure 18
Transient Thermal Impedance Safe Operating Area
Product Data Sheet
8
JX.3T04.27AA/2
Document Outline JX3S0020120M General Description Thermal Characteristics Typical Performance Figure 1 Output Characteristics (TJ=25 °C) Figure 3 Figure 2 Output Characteristics (TJ=175°C) Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Body Diode Characteristic at 25°C Figure 8 Gate Charge Characteristics Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Switching Energy vs. RG(ext) RG(ext)=2.5Ω Figure 15 Figure 16 Switching Times vs. RG(ext) Typical Performance Figure 17 Figure 18 Contact Info