Datasheet JX3S0020120M (JX Semiconductor) - 2

JX3S0020120M 1200V, N-Channel, Silicon Carbide MOSFET Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Symbol Parameter Values Unit
VDS Drain-source Voltage 1200 V Drain Current (continuous; TC=25°C) 115 A ID Drain Current (continuous; TC=100°C) 85 A IDM Drain Current (pulsed) 250 A VGS Gate-source Voltage -10/+22V V PD Power Dissipation (TC=25°C) 550 W TJ; Tstg Junction and Storage Temperature Range -55 to +175 °C
MOSFET Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Static characteristics (at TJ=25°C unless otherwise specified)
BVDS Drain-source Breakdown Voltage 1200 - - V ID=250μA; VGS=0V IDSS Zero Gate Voltage Drain Current - 5 100 μA VDS=1200V; VGS=0V IGSS Gate-body Leakage Current - 10 250 nA VGS=-10/20V; VDS=0V VGS(th) Gate Threshold Voltage 2 3 4 V VDS=VGS; ID=22mA VGS(on) Recommended Turn-on Voltage - 18 - V Static V Recommended Turn-off Voltage GS(off) - -5 - 16 22 VGS=18V; ID=50A RDS(on) Static Drain-source on Resistance mΩ 28 VGS=18V; ID=50A; TJ=175°C
Dynamic characteristics (at TJ=25°C unless otherwise specified)
Ciss Input Capacitance - 6878 - Coss Output Capacitance - 288 - pF VDS=1000V; f=1MHz; VAC=25mV Crss Reverse Transfer Capacitance - 13 - gfs Transconductance - 51 - S VDS=20V; ID=50A Eoss Coss Stored Energy - 141 - μJ VDS=1000V; f=1MHz Eon Turn-on Energy (Body Diode) - 2.57 - V mJ DS=800V; VGS=-5/18V; ID=50A; L=68μH; TJ=175°C Eof Turn-of Energy (Body Diode) - 1.59 - QG Total Gate Charge - 238 - QGS Gate-source Charge - 76.7 - nC VDS=800V; VGS=-5/18V; ID=50A QGD Gate-drain Charge - 78.3 - RG(int) Internal Gate Resistance - 2.2 - Ω f=1MHz; VAC=25mV td(on) Turn-on Delay Time - 38 - tr Rise Time - 52 - VDS=800V; VGS=-5/+20V; ID=50A; ns RG(ext)=2.5Ω; Load=68µH t Turn-of Delay Time d(off) - 75 - tf Fal Time - 42 -
Product Data Sheet
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JX-3T04-27AA/2
Document Outline JX3S0020120M General Description Thermal Characteristics Typical Performance Figure 1 Output Characteristics (TJ=25 °C) Figure 3 Figure 2 Output Characteristics (TJ=175°C) Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Body Diode Characteristic at 25°C Figure 8 Gate Charge Characteristics Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Switching Energy vs. RG(ext) RG(ext)=2.5Ω Figure 15 Figure 16 Switching Times vs. RG(ext) Typical Performance Figure 17 Figure 18 Contact Info