Datasheet JX3S0020120M (JX Semiconductor) - 3

JX3S0020120M 1200V, N-Channel, Silicon Carbide MOSFET Body Diode Characteristics (at TJ=25°C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions
- 3.5 6 VGS=0V; IF=37.5A; TJ=25°C VSD Diode Forward Voltage V - 3.0 6 VGS=0V; IF=37.5A; TJ=175°C IS Continuous Diode Forward Current - 110 - A VGS=0V; TC=25°C Trr Reverse Recovery Time - 56 - ns VGS=-5V; IF=50A; VR=800V; Qrr Reverse Recovery Charge - 613 - nC di/dt=900A/μs; TJ=175°C Irrm Peak Reverse Recovery Current - 18 - A
Thermal Characteristics Symbol Parameter Value. Unit
RθJC Thermal Resistance, Junction-to-Case 0.27 °C/W RθJA Thermal Resistance, Junction-to-Ambient 40 °C/W The values are based on Junction-to-Case Thermal Impedance measured with the device mounted to a large heat sink, assuming a maximum junction temperature of TJ(max)=175°C.
Product Data Sheet
3
JX-3T04-27AA/2
Document Outline JX3S0020120M General Description Thermal Characteristics Typical Performance Figure 1 Output Characteristics (TJ=25 °C) Figure 3 Figure 2 Output Characteristics (TJ=175°C) Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Body Diode Characteristic at 25°C Figure 8 Gate Charge Characteristics Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Switching Energy vs. RG(ext) RG(ext)=2.5Ω Figure 15 Figure 16 Switching Times vs. RG(ext) Typical Performance Figure 17 Figure 18 Contact Info