Datasheet AP3917D (Diodes) - 4
| 制造商 | Diodes |
| 描述 | 700V Non-isolated regulator up to 370mA output current in SO-7 package |
| 页数 / 页 | 12 / 4 — AP3917D. Electrical Characteristics. Symbol. Parameter. Condition. Min. … |
| 文件格式/大小 | PDF / 593 Kb |
| 文件语言 | 英语 |
AP3917D. Electrical Characteristics. Symbol. Parameter. Condition. Min. Typ. Max. Unit. HV Startup Current Source. VBP Voltage Management
该数据表的模型线
文件文字版本
AP3917D Electrical Characteristics
(VBP = 8.2V, -40C <TA<+125C, unless otherwise specified.)
Symbol Parameter Condition Min Typ Max Unit HV Startup Current Source
IHV HV Supply Current VBP = 7V, VDRAIN = 100V — 3.5 — mA VBP= 8.7V; ILEAK Leakage Current of Drain VDRAIN = 400V, — 10 12 µA TA = +25°C
VBP Voltage Management
VBP Increasing Level at which HV Supply is VBP_HVOFF — OFF 8.1 8.5 8.8 V VBP Decreasing Level at which HV Supply is VBP_HVON — ON 7.8 8.2 8.6 V VBP_HYS VBP Hysteresis (VBP_HVOFF -VBP_HVON) — — 280 — mV VBP_UVLO VBP Minimum Operating Voltage TA = +25°C — 6.5 — V VBP_RESTART VBP Restart Voltage — — 4.5 — V V V I BP Operating Current with MOSFET BP = 8.5V, f = 37kHz, BP1 — Switching — 350 µA D = 40%, TA = +25°C IBP2 VBP Quiescent Current with No Switching TA = +25°C — 110 200 µA IBP_LATCH VBP Latch Off-Current VBP = 8.8V, TA = +25°C — 26 — µA
Internal MOSFET
VDS Breakdown Voltage TA = +25°C (Note 7) 700 — — V RDS(ON) ON Resistance TA = +25°C, ID = 0.5A — — 10.5 Ω
Internal Current Sense
IPK_MAX Maximum Peak Current TA = +25°C 413 500 587 mA tLEB1 Leading-Edge Blanking TA = +25°C — 250 400 ns ISCP Current Set Point for Short Circuit Protection TA = +25°C 660 800 940 mA Leading-Edge Blanking for Short Circuit tLEB2 T Protection A = +25°C — 200 — ns
Feedback Input (FB Pin)
tMINOFF Minimum Off-Time TA = +25°C 10.5 15.5 18.5 µs Feedback Voltage for MOSFET Switch-On VFB — 2.4 2.5 2.6 V Threshold Feedback Voltage for Over Load Protection VFB_OLP — Trigger Threshold 1.56 1.7 1.84 V tOLP Over Load Protection Delay Time f = 36kHz — 170 — ms VOLD Open-Loop Detection Voltage TA = +25°C — 60 — mV tOLD Open-Loop Detection Blanking Time f = 15kHz, TA = +25°C — 4.3 — ms
Over Temperature Protection
TOTP Thermal Shutdown Threshold (Note 8) — +135 +150 +165 °C Notes: 7. The drain-source voltage is 80% of VDS in the aging condition. 8. Guaranteed by design. AP3917D 4 of 12 March 2025 Document number: DS41540 Rev. 8 - 3
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(VBP = 8.2V, -40C <TA<+125C, unless otherwise specified.)
Symbol Parameter Condition Min Typ Max Unit HV Startup Current Source
IHV HV Supply Current VBP = 7V, VDRAIN = 100V — 3.5 — mA VBP= 8.7V; ILEAK Leakage Current of Drain VDRAIN = 400V, — 10 12 µA TA = +25°C
VBP Voltage Management
VBP Increasing Level at which HV Supply is VBP_HVOFF — OFF 8.1 8.5 8.8 V VBP Decreasing Level at which HV Supply is VBP_HVON — ON 7.8 8.2 8.6 V VBP_HYS VBP Hysteresis (VBP_HVOFF -VBP_HVON) — — 280 — mV VBP_UVLO VBP Minimum Operating Voltage TA = +25°C — 6.5 — V VBP_RESTART VBP Restart Voltage — — 4.5 — V V V I BP Operating Current with MOSFET BP = 8.5V, f = 37kHz, BP1 — Switching — 350 µA D = 40%, TA = +25°C IBP2 VBP Quiescent Current with No Switching TA = +25°C — 110 200 µA IBP_LATCH VBP Latch Off-Current VBP = 8.8V, TA = +25°C — 26 — µA
Internal MOSFET
VDS Breakdown Voltage TA = +25°C (Note 7) 700 — — V RDS(ON) ON Resistance TA = +25°C, ID = 0.5A — — 10.5 Ω
Internal Current Sense
IPK_MAX Maximum Peak Current TA = +25°C 413 500 587 mA tLEB1 Leading-Edge Blanking TA = +25°C — 250 400 ns ISCP Current Set Point for Short Circuit Protection TA = +25°C 660 800 940 mA Leading-Edge Blanking for Short Circuit tLEB2 T Protection A = +25°C — 200 — ns
Feedback Input (FB Pin)
tMINOFF Minimum Off-Time TA = +25°C 10.5 15.5 18.5 µs Feedback Voltage for MOSFET Switch-On VFB — 2.4 2.5 2.6 V Threshold Feedback Voltage for Over Load Protection VFB_OLP — Trigger Threshold 1.56 1.7 1.84 V tOLP Over Load Protection Delay Time f = 36kHz — 170 — ms VOLD Open-Loop Detection Voltage TA = +25°C — 60 — mV tOLD Open-Loop Detection Blanking Time f = 15kHz, TA = +25°C — 4.3 — ms
Over Temperature Protection
TOTP Thermal Shutdown Threshold (Note 8) — +135 +150 +165 °C Notes: 7. The drain-source voltage is 80% of VDS in the aging condition. 8. Guaranteed by design. AP3917D 4 of 12 March 2025 Document number: DS41540 Rev. 8 - 3
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.