Datasheet Vishay IRFD024 — 数据表

IRFD024
www.vishay.com Vishay Siliconix Power MOSFET
FEATURES D • Dynamic dV/dt rating HVMDIP • For Automatic insertion
• End stackable
G S • 175 °C operating temperature
• Fast switching G • Ease of paralleling
S D • Simple drive requirements N-Channel MOSFET • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 PRODUCT SUMMARY
VDS (V) DESCRIPTION 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness. 0.10 11 Configuration The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W. Single ORDERING INFORMATION
Package HVMDIP Lead (Pb)-free IRFD024PbF ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT Drain-source voltage VDS 60 Gate-source voltage VGS ± 20 VGS at 10 V Continuous drain current TA = 25 °C
TA = 100 °C Pulsed drain current a Peak diode recovery dV/dt TA = 25 °C c Operating junction and storage temperature range
Soldering recommendations (peak temperature) d A 1.8
20 Linear derating factor
Maximum power dissipation V 2.5 ID
IDM Single pulse avalanche energy b UNIT 0.0083 W/°C EAS 91 mJ PD 1.3 W dV/dt 4.5 V/ns TJ, Tstg -55 to +175 For 10 s °C 300 Notes …