Datasheet IRFD024 (Vishay)
| 制造商 | Vishay |
| 描述 | N-Channel Power MOSFET |
| 页数 / 页 | 9 / 1 — IRFD024. Power MOSFET. FEATURES. HVMDIP. PRODUCT SUMMARY. DESCRIPTION. … |
| 文件格式/大小 | PDF / 425 Kb |
| 文件语言 | 英语 |
IRFD024. Power MOSFET. FEATURES. HVMDIP. PRODUCT SUMMARY. DESCRIPTION. ORDERING INFORMATION. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
该数据表的模型线
文件文字版本
IRFD024
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
HVMDIP
• For Automatic insertion • End stackable G • 175 °C operating temperature • Fast switching S G • Ease of paralleling D S • Simple drive requirements N-Channel MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY DESCRIPTION
VDS (V) 60 Third generation power MOSFETs from Vishay provide the RDS(on) (Ω) VGS = 10 V 0.10 designer with the best combination of fast switching, Qg (Max.) (nC) 25 ruggedized device design, low on-resistance and Qgs (nC) 5.8 cost-effectiveness. Qgd (nC) 11 The 4 pin DIP package is a low cost machine-insertable Configuration Single case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION
Package HVMDIP Lead (Pb)-free IRFD024PbF
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60 V Gate-source voltage VGS ± 20 TA = 25 °C 2.5 Continuous drain current VGS at 10 V ID TA = 100 °C 1.8 A Pulsed drain current a IDM 20 Linear derating factor 0.0083 W/°C Single pulse avalanche energy b EAS 91 mJ Maximum power dissipation TA = 25 °C PD 1.3 W Peak diode recovery dV/dt c dV/dt 4.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) d For 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 Ω, IAS = 2.5 A (see fig. 12) c. ISD ≤ 17 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 120 °C/W S21-0885-Rev. D, 30-Aug-2021
1
Document Number: 91126 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
HVMDIP
• For Automatic insertion • End stackable G • 175 °C operating temperature • Fast switching S G • Ease of paralleling D S • Simple drive requirements N-Channel MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY DESCRIPTION
VDS (V) 60 Third generation power MOSFETs from Vishay provide the RDS(on) (Ω) VGS = 10 V 0.10 designer with the best combination of fast switching, Qg (Max.) (nC) 25 ruggedized device design, low on-resistance and Qgs (nC) 5.8 cost-effectiveness. Qgd (nC) 11 The 4 pin DIP package is a low cost machine-insertable Configuration Single case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION
Package HVMDIP Lead (Pb)-free IRFD024PbF
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60 V Gate-source voltage VGS ± 20 TA = 25 °C 2.5 Continuous drain current VGS at 10 V ID TA = 100 °C 1.8 A Pulsed drain current a IDM 20 Linear derating factor 0.0083 W/°C Single pulse avalanche energy b EAS 91 mJ Maximum power dissipation TA = 25 °C PD 1.3 W Peak diode recovery dV/dt c dV/dt 4.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) d For 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 Ω, IAS = 2.5 A (see fig. 12) c. ISD ≤ 17 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 120 °C/W S21-0885-Rev. D, 30-Aug-2021
1
Document Number: 91126 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000