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by MTD20P06HDL/D SEMICONDUCTOR TECHNICAL DATA ! Motorola Preferred Device TMOS POWER FET
LOGIC LEVEL
15 AMPERES
60 VOLTS
RDS(on) = 175 MΩ P–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to
withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for low–voltage,
high–speed switching applications in power supplies, converters
and PWM motor controls, and other inductive loads. The avalanche
energy capability is specified to eliminate the guesswork in designs
where inductive loads are switched, and to offer additional safety
margin against unexpected voltage transients.
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• Ultra Low RDS(on), High–Cell Density, HDTMOS
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Avalanche Energy Specified …
