MTD20P06HDL
Preferred Device Power MOSFET
20 Amps, 60 Volts, Logic
Level
P−Channel DPAK
http://onsemi.com This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low−voltage, high−speed switching applications in power supplies,
converters and PWM motor controls, and other inductive loads. The
avalanche energy capability is specified to eliminate the guesswork in
designs where inductive loads are switched, and to offer additional
safety margin against unexpected voltage transients. 20 AMPERES, 60 VOLTS
RDS(on) = 175 mW
P−Channel
D Features •
•
•
•
• Ultra Low RDS(on), High−Cell Density, HDTMOS
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Avalanche Energy Specified
…