Datasheets - 双极阵列和模块 ON Semiconductor
小节: "双极阵列和模块"
制造商: "ON Semiconductor"
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- 达林顿晶体管 10 A、100 V PNP 达林顿双极功率晶体管专为通用和低速开关应用而设计。BDX33B、BDX33C、BDX34B 和 BDX34C 是互补设备。
- 达林顿晶体管 10 A、100 V PNP 达林顿双极功率晶体管专为通用和低速开关应用而设计。BDX33B、BDX33C、BDX34B 和 BDX34C 是互补设备。
- 达林顿晶体管 10 A、100 V PNP 达林顿双极功率晶体管专为通用和低速开关应用而设计。BDX33B、BDX33C、BDX34B 和 BDX34C 是互补设备。
- 达林顿晶体管 10 A、100 V PNP 达林顿双极功率晶体管专为通用和低速开关应用而设计。BDX33B、BDX33C、BDX34B 和 BDX34C 是互补设备。
- 达林顿晶体管 10 A、100 V PNP 达林顿双极功率晶体管专为通用和低速开关应用而设计。BDX33B、BDX33C、BDX34B 和 BDX34C 是互补设备。
- 达林顿晶体管 10 A、100 V PNP 达林顿双极功率晶体管专为通用和低速开关应用而设计。BDX33B、BDX33C、BDX34B 和 BDX34C 是互补设备。
- 达林顿晶体管 10 A、100 V PNP 达林顿双极功率晶体管专为通用和低速开关应用而设计。BDX33B、BDX33C、BDX34B 和 BDX34C 是互补设备。
- 达林顿晶体管 10 A、100 V PNP 达林顿双极功率晶体管专为通用和低速开关应用而设计。BDX33B、BDX33C、BDX34B 和 BDX34C 是互补设备。
- 达林顿晶体管 10 A、100 V PNP 达林顿双极功率晶体管专为通用和低速开关应用而设计。BDX33B、BDX33C、BDX34B 和 BDX34C 是互补设备。
- 达林顿晶体管 10 A、100 V PNP 达林顿双极功率晶体管专为通用和低速开关应用而设计。BDX33B、BDX33C、BDX34B 和 BDX34C 是互补设备。
Part Number: MJB5742T4G Manufacturer: ON Semiconductor Description: TRANS, DARL, NPN, 400 V, 8 A, TO263AB Download Data Sheet Docket: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high-voltage power ...
Part Number: ULN2003ADR2G Manufacturer: ON Semiconductor Description: DARLINGTON TRANSISTOR ARRAY, NPN, 7, 50 V, SOIC Specifications: Continuous Collector Current Ic: 500 mA Number of Pins: 16 Number of Transistors: 7 Operating Temperature Range: ...
Part Number: MUN5312DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 22K/22KOHM, SOT-363 Specifications: Collector Emitter Voltage V(br)ceo: 50 V DC Collector Current: -100 mA DC Current Gain: 100 Power Dissipation: 187 mW ...
Part Number: MJB44H11T4G Manufacturer: ON Semiconductor Description: POWER TRANSISTOR, NPN, 80 V, D2-PAK Specifications: Collector Emitter Voltage V(br)ceo: 80 V Number of Pins: 3 Operating Temperature Range: -55°C to +150°C Power Dissipation: 50 W ...- Part Number: MJB42CT4G Manufacturer: ON Semiconductor Description: POWER TRANSISTOR, PNP, -100 V D2-PAK Specifications: Collector Emitter Voltage V(br)ceo: 100 V Number of Pins: 3 Operating Temperature Range: -65°C to +150°C Power Dissipation: 65 W ...
- Part Number: MJB41CT4G Manufacturer: ON Semiconductor Description: POWER TRANSISTOR, NPN, 100 V, D2-PAK Specifications: Collector Emitter Voltage V(br)ceo: 100 V Number of Pins: 3 Operating Temperature Range: -65°C to +150°C Power Dissipation: 65 W ...
Part Number: MUN5335DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 47K/2.2KOHM, SOT363 Specifications: Collector Emitter Voltage V(br)ceo: 50 V DC Collector Current: -100 mA DC Current Gain: 140 Power Dissipation: 187 mW ...- Part Number: MUN5313DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 47K/47KOHM, SC88 Download Data Sheet Docket: MUN5311DW1T1G Series Dual Bias Resistor Transistors Preferred Devices NPN and PNP Silicon Surface Mount ...
- Part Number: MUN5230DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 1K/1KOHM, SOT-363 Download Data Sheet Docket: MUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors ...
- Part Number: MUN5111DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 10K/10KOHM, SOT-363 Download Data Sheet Docket: MUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors ...
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