Datasheet JX3S0070R170M (JX Semiconductor) - 8
| 制造商 | JX Semiconductor |
| 描述 | 1700V, 40A, 72mΩ, N-Channel, Silicon Carbide MOSFET in TO-247-3L package |
| 页数 / 页 | 10 / 8 — JX3S0070R1700M. 1700V, N.Channel, Silicon Carbide MOSFET. Typical … |
| 文件格式/大小 | PDF / 636 Kb |
| 文件语言 | 英语 |
JX3S0070R1700M. 1700V, N.Channel, Silicon Carbide MOSFET. Typical Performance. 0.5. 0.3. 0.1. 0.05. 0.02. 0.01. Single Pulse. Time, tp (s)
该数据表的模型线
文件文字版本
JX3S0070R1700M 1700V, N.Channel, Silicon Carbide MOSFET Typical Performance
1.000 100
0.5 0.3
0.100 10
0.1
10μs
0.05
100μs
0.02
1
0.01
1ms 0.010 10ms
Single Pulse
0.1 0.001 0.01 1.E-06 1. E-05 1. E-04 1. E-03 1. E-02 1. E-01 1. E+00 0.1 1 10 100 1000
Time, tp (s) Drain-Source Voltage, VDS (V) Figure 17 Figure 18
Transient Thermal Impedance Safe Operating Area
Product Data Sheet
8
JXC.3T04.40AA/2
Document Outline JX3S0070R170M Thermal Characteristics Typical Performance Figure 1 Figure 3 Normalized On-Resistance vs. Temperature Figure 2 Figure 4 Typical Performance Figure 5 Figure 6 Body Diode Characteristic at 25°C Figure 7 Figure 8 Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Figure 15 Figure 16 Typical Performance Figure 17 Figure 18 Contact Info
1.000 100
0.5 0.3
0.100 10
0.1
10μs
0.05
100μs
0.02
1
0.01
1ms 0.010 10ms
Single Pulse
0.1 0.001 0.01 1.E-06 1. E-05 1. E-04 1. E-03 1. E-02 1. E-01 1. E+00 0.1 1 10 100 1000
Time, tp (s) Drain-Source Voltage, VDS (V) Figure 17 Figure 18
Transient Thermal Impedance Safe Operating Area
Product Data Sheet
8
JXC.3T04.40AA/2
Document Outline JX3S0070R170M Thermal Characteristics Typical Performance Figure 1 Figure 3 Normalized On-Resistance vs. Temperature Figure 2 Figure 4 Typical Performance Figure 5 Figure 6 Body Diode Characteristic at 25°C Figure 7 Figure 8 Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Figure 15 Figure 16 Typical Performance Figure 17 Figure 18 Contact Info