Datasheet JX3S0070R170M (JX Semiconductor) - 2

制造商JX Semiconductor
描述1700V, 40A, 72mΩ, N-Channel, Silicon Carbide MOSFET in TO-247-3L package
页数 / 页10 / 2 — JX3S0070R170M. 1700V, N-Channel, Silicon Carbide MOSFET. Absolute Maximum …
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JX3S0070R170M. 1700V, N-Channel, Silicon Carbide MOSFET. Absolute Maximum Ratings (at TC=25°C unless otherwise specified)

JX3S0070R170M 1700V, N-Channel, Silicon Carbide MOSFET Absolute Maximum Ratings (at TC=25°C unless otherwise specified)

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JX3S0070R170M 1700V, N-Channel, Silicon Carbide MOSFET Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Symbol Parameter Values Unit
VDS Drain-Source Voltage 1700 V Drain Current (Continuous; TC=25OC) 40 A ID Drain Current (Continuous; TC=100OC) 28 A IDM Drain Current (Pulsed) 118 A VGS Gate-Source Voltage -10/+22 V PD Power Dissipation 242 W TJ; Tstg Junction and Storage Temperature Range -55 to +175 OC
MOSFET Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Static characteristics (at TJ=25°C unless otherwise specified)
BVDS Drain-Source Breakdown Voltage 1700 - - V ID=250μA; VGS=0V IDSS Zero Gate Voltage Drain Current - 5 100 μA VDS=1700V; VGS=0V IGSS Gate-Body Leakage Current - 10 150 nA VGS=-10 to 20V; VDS=0V VGS(th) Gate Threshold Voltage 2 3 4 V VDS=VGS; ID=10mA VGS(on) Recommended Turn-on Voltage - 18 - V Static VGS(off) Recommended Turn-off Voltage - -5 - - 72 88 VGS=18V; ID=20A; TJ=25OC RDS(on) Static Drain-Source on Resistance mΩ - 130 - VGS=18V; ID=20A; TJ=175OC
Dynamic characteristics (at TJ=25°C unless otherwise specified)
Ciss Input Capacitance - 2450 - Coss Output Capacitance - 90 - pF VDS=1000V; f=1MHz; VAC=25mV Crss Reverse Transfer Capacitance - 3 - gfs Transconductance - 16 - S VDS=20V; ID=20A Eoss Coss Stored Energy - 60 - μJ VDS=1000V; f=1MHz Eon Turn-on Energy (Body Diode) - 950 - μJ VDS=1000V; VGS=-5/+18V; ID=25A; L=150µH; RG(ext)=4.7Ω; TJ=175OC Eof Turn-of Energy (Body Diode) - 200 - QG Total Gate Charge - 100 - QGS Gate-Source Charge - 45 - nC VDS=1000V; VGS=-5/+18V; ID=25A QGD Gate-Drain Charge - 22 - RG(int) Internal Gate Resistance - 5.6 - Ω f=1MHz; VAC=25mV td(on) Turn-on Delay Time - 35 - tr Rise Time - 22 - ns VDS=1000V; VGS=-5/+18V; ID=25A; RG(ext)=4.7Ω; Load=150µH td(off) Turn-of Delay Time - 19 - tf Fal Time - 15 -
Product Data Sheet
2
JXC-3T04-40AA/2
Document Outline JX3S0070R170M Thermal Characteristics Typical Performance Figure 1 Figure 3 Normalized On-Resistance vs. Temperature Figure 2 Figure 4 Typical Performance Figure 5 Figure 6 Body Diode Characteristic at 25°C Figure 7 Figure 8 Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Figure 15 Figure 16 Typical Performance Figure 17 Figure 18 Contact Info