Datasheet JX3S0070R170M (JX Semiconductor) - 7

JX3S0070R1700M 1700V, N.Channel, Silicon Carbide MOSFET Typical Performance
1600 1400
VGS=-5/+18V VGS=-5/ +18V VDS=1000V V 0V
1400
DS=100 L=150μH
1200
L=150μH RG(ext)=4.7Ω ID=25A
1200
Etotal Etotal
1000 1000 800 800
Eon Eon
600 600 400 400
Eoff Eoff
200 200 0 0 0 10 20 30 40 0 2 4 6 8 10 12
Drain-Source Current, IDS (A) External Gate Resistor, RG(ext) (Ohms) Figure 13 Figure 14
Switching Energy vs. Drain Current Switching Energy vs. RG(ext) 1400 80
VGS=-5/+18V VGS=-5/+18V VDS=1000V VDS=1000V
1200 70
L=150μH L=150μH ID=25A Etotal ID =25A RG(ext)=4.7Ω
60 1000
td(on) Eon
50 800
tr
40 600
td(off)
30
tf
400 20
Eoff
200 10 0 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30
Junction Temperature, TJ (°C) External Gate Resistor, RG(ext) (Ohms) Figure 15 Figure 16
Switching Energy vs. Temperature Switching Times vs. RG(ext)
Product Data Sheet
7
JXC.3T04.40AA/2
Document Outline JX3S0070R170M Thermal Characteristics Typical Performance Figure 1 Figure 3 Normalized On-Resistance vs. Temperature Figure 2 Figure 4 Typical Performance Figure 5 Figure 6 Body Diode Characteristic at 25°C Figure 7 Figure 8 Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Figure 15 Figure 16 Typical Performance Figure 17 Figure 18 Contact Info