Datasheet TP65B110HRU (Renesas) - 8
| 制造商 | Renesas |
| 描述 | 650V 110mΩ High-Voltage GaN Bidirectional Switch in TOLT Package |
| 页数 / 页 | 15 / 8 — TP65B110HRU Datasheet. Figure 6. Typical On-State Resistance vs … |
| 文件格式/大小 | PDF / 1.6 Mb |
| 文件语言 | 英语 |
TP65B110HRU Datasheet. Figure 6. Typical On-State Resistance vs Gate-Source
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TP65B110HRU Datasheet Figure 6. Typical On-State Resistance vs Gate-Source Figure 7. Typical On-State Resistance vs Junction Voltage Temperature, Normalized at 25°C Figure 8. Typical Gate Charge Characteristics Figure 9. Typical Capacitance Characteristics with Single Gate Off and Both Gates Off,
ISS = 5A, VSS = 400V f = 1MHz R07DS1683EU0100 Rev.1.00 Page 8 Mar 10, 2026 Document Outline 1. Pin Information 1.1 Pin Assignments 1.2 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Specifications 2.3 Recommended Operating Conditions 2.4 Gate Characteristics 2.5 On-State Characteristics 2.6 Off-State Characteristics 2.7 Dynamic Characteristics 2.8 Diode Characteristics 3. Typical Characteristics 4. Test Circuits and Waveforms 5. Modes of Operation 6. Device Architecture 7. Design Considerations 8. Package Outline Drawings 9. Related Information 10. Ordering Information 11. Revision History
ISS = 5A, VSS = 400V f = 1MHz R07DS1683EU0100 Rev.1.00 Page 8 Mar 10, 2026 Document Outline 1. Pin Information 1.1 Pin Assignments 1.2 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Specifications 2.3 Recommended Operating Conditions 2.4 Gate Characteristics 2.5 On-State Characteristics 2.6 Off-State Characteristics 2.7 Dynamic Characteristics 2.8 Diode Characteristics 3. Typical Characteristics 4. Test Circuits and Waveforms 5. Modes of Operation 6. Device Architecture 7. Design Considerations 8. Package Outline Drawings 9. Related Information 10. Ordering Information 11. Revision History