Datasheet TP65B110HRU (Renesas) - 2
| 制造商 | Renesas |
| 描述 | 650V 110mΩ High-Voltage GaN Bidirectional Switch in TOLT Package |
| 页数 / 页 | 15 / 2 — TP65B110HRU Datasheet. Contents 1. Pin Information ... 3. Specifications … |
| 文件格式/大小 | PDF / 1.6 Mb |
| 文件语言 | 英语 |
TP65B110HRU Datasheet. Contents 1. Pin Information ... 3. Specifications ... 4. Typical Characteristics ... 7
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TP65B110HRU Datasheet Contents 1. Pin Information ... 3
1.1 Pin Assignments .. 3 1.2 Pin Descriptions ... 3
2. Specifications ... 4
2.1 Absolute Maximum Ratings .. 4 2.2 Thermal Specifications ... 4 2.3 Recommended Operating Conditions ... 4 2.4 Gate Characteristics .. 5 2.5 On-State Characteristics .. 5 2.6 Off-State Characteristics .. 5 2.7 Dynamic Characteristics .. 6 2.8 Diode Characteristics ... 6
3. Typical Characteristics ... 7 4. Test Circuits and Waveforms ... 11 5. Modes of Operation .. 11 6. Device Architecture .. 12 7. Design Considerations ... 12 8. Package Outline Drawings ... 13 9. Related Information .. 14 10. Ordering Information .. 14 11. Revision History ... 14 Figures
Figure 1. Pin Assignments ... 3 Figure 2. Typical Output Characteristics, TJ = 25°C Parameter: VG1S1 .. 7 Figure 3. Typical Output Characteristics, TJ = 150°C Parameter: VG1S1 .. 7 Figure 4. Typical Transfer Characteristics, Parameter: TJ .. 7 Figure 5. Typical Reverse Conduction Characteristics, Parameter: TJ .. 7 Figure 6. Typical On-State Resistance vs Gate-Source Voltage ... 8 Figure 7. Typical On-State Resistance vs Junction Temperature, Normalized at 25°C.. 8 Figure 8. Typical Gate Charge Characteristics ISS = 5A, VSS = 400V .. 8 Figure 9. Typical Capacitance Characteristics with Single Gate Off and Both Gates Of , f = 1MHz ... 8 Figure 10. Output Charge vs Voltage ... 9 Figure 11. Output Energy vs Voltage ... 9 Figure 12. Thermal Resistance vs Pulse Width (single pulse). ... 9 Figure 13. Max Power Dissipation vs Case Temperature ... 9 Figure 14. Safe Operating Area, Parameter Pulse Width ... 10 Figure 15. Switching Time Test Circuit... 11 Figure 16. Switching Time Waveform .. 11 Figure 17. Both Gates On/Of .. 11 Figure 18. Opposite Gate On... 11 Figure 19. Device Symbol and Device Architecture .. 12 Figure 20. Package Outline Drawing – 16-TOLT 10.1 × 9.9 × 2.3 mm Body ... 13 R07DS1683EU0100 Rev.1.00 Page 2 Mar 10, 2026 Document Outline 1. Pin Information 1.1 Pin Assignments 1.2 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Specifications 2.3 Recommended Operating Conditions 2.4 Gate Characteristics 2.5 On-State Characteristics 2.6 Off-State Characteristics 2.7 Dynamic Characteristics 2.8 Diode Characteristics 3. Typical Characteristics 4. Test Circuits and Waveforms 5. Modes of Operation 6. Device Architecture 7. Design Considerations 8. Package Outline Drawings 9. Related Information 10. Ordering Information 11. Revision History
TP65B110HRU Datasheet Contents 1. Pin Information ... 3
1.1 Pin Assignments .. 3 1.2 Pin Descriptions ... 3
2. Specifications ... 4
2.1 Absolute Maximum Ratings .. 4 2.2 Thermal Specifications ... 4 2.3 Recommended Operating Conditions ... 4 2.4 Gate Characteristics .. 5 2.5 On-State Characteristics .. 5 2.6 Off-State Characteristics .. 5 2.7 Dynamic Characteristics .. 6 2.8 Diode Characteristics ... 6
3. Typical Characteristics ... 7 4. Test Circuits and Waveforms ... 11 5. Modes of Operation .. 11 6. Device Architecture .. 12 7. Design Considerations ... 12 8. Package Outline Drawings ... 13 9. Related Information .. 14 10. Ordering Information .. 14 11. Revision History ... 14 Figures
Figure 1. Pin Assignments ... 3 Figure 2. Typical Output Characteristics, TJ = 25°C Parameter: VG1S1 .. 7 Figure 3. Typical Output Characteristics, TJ = 150°C Parameter: VG1S1 .. 7 Figure 4. Typical Transfer Characteristics, Parameter: TJ .. 7 Figure 5. Typical Reverse Conduction Characteristics, Parameter: TJ .. 7 Figure 6. Typical On-State Resistance vs Gate-Source Voltage ... 8 Figure 7. Typical On-State Resistance vs Junction Temperature, Normalized at 25°C.. 8 Figure 8. Typical Gate Charge Characteristics ISS = 5A, VSS = 400V .. 8 Figure 9. Typical Capacitance Characteristics with Single Gate Off and Both Gates Of , f = 1MHz ... 8 Figure 10. Output Charge vs Voltage ... 9 Figure 11. Output Energy vs Voltage ... 9 Figure 12. Thermal Resistance vs Pulse Width (single pulse). ... 9 Figure 13. Max Power Dissipation vs Case Temperature ... 9 Figure 14. Safe Operating Area, Parameter Pulse Width ... 10 Figure 15. Switching Time Test Circuit... 11 Figure 16. Switching Time Waveform .. 11 Figure 17. Both Gates On/Of .. 11 Figure 18. Opposite Gate On... 11 Figure 19. Device Symbol and Device Architecture .. 12 Figure 20. Package Outline Drawing – 16-TOLT 10.1 × 9.9 × 2.3 mm Body ... 13 R07DS1683EU0100 Rev.1.00 Page 2 Mar 10, 2026 Document Outline 1. Pin Information 1.1 Pin Assignments 1.2 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Specifications 2.3 Recommended Operating Conditions 2.4 Gate Characteristics 2.5 On-State Characteristics 2.6 Off-State Characteristics 2.7 Dynamic Characteristics 2.8 Diode Characteristics 3. Typical Characteristics 4. Test Circuits and Waveforms 5. Modes of Operation 6. Device Architecture 7. Design Considerations 8. Package Outline Drawings 9. Related Information 10. Ordering Information 11. Revision History