Datasheet TP65B110HRU (Renesas) - 3
| 制造商 | Renesas |
| 描述 | 650V 110mΩ High-Voltage GaN Bidirectional Switch in TOLT Package |
| 页数 / 页 | 15 / 3 — TP65B110HRU Datasheet. 1. Pin Information 1.1. Pin Assignments. Figure 1. … |
| 文件格式/大小 | PDF / 1.6 Mb |
| 文件语言 | 英语 |
TP65B110HRU Datasheet. 1. Pin Information 1.1. Pin Assignments. Figure 1. Pin Assignments. 1.2. Pin Descriptions. Pin Number
该数据表的模型线
文件文字版本
TP65B110HRU Datasheet 1. Pin Information 1.1 Pin Assignments Figure 1. Pin Assignments 1.2 Pin Descriptions Pin Number Pin Name Description
1–6 S1 Source 1 7 KS1 Kelvin Source 1 8 G1 Gate 1 9 G2 Gate 2 10 KS2 Kelvin Source 2 11–16 S2 Source 2 Tab Sub GaN HEMT Substrate (Thermal path) R07DS1683EU0100 Rev.1.00 Page 3 Mar 10, 2026 Document Outline 1. Pin Information 1.1 Pin Assignments 1.2 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Specifications 2.3 Recommended Operating Conditions 2.4 Gate Characteristics 2.5 On-State Characteristics 2.6 Off-State Characteristics 2.7 Dynamic Characteristics 2.8 Diode Characteristics 3. Typical Characteristics 4. Test Circuits and Waveforms 5. Modes of Operation 6. Device Architecture 7. Design Considerations 8. Package Outline Drawings 9. Related Information 10. Ordering Information 11. Revision History
1–6 S1 Source 1 7 KS1 Kelvin Source 1 8 G1 Gate 1 9 G2 Gate 2 10 KS2 Kelvin Source 2 11–16 S2 Source 2 Tab Sub GaN HEMT Substrate (Thermal path) R07DS1683EU0100 Rev.1.00 Page 3 Mar 10, 2026 Document Outline 1. Pin Information 1.1 Pin Assignments 1.2 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Specifications 2.3 Recommended Operating Conditions 2.4 Gate Characteristics 2.5 On-State Characteristics 2.6 Off-State Characteristics 2.7 Dynamic Characteristics 2.8 Diode Characteristics 3. Typical Characteristics 4. Test Circuits and Waveforms 5. Modes of Operation 6. Device Architecture 7. Design Considerations 8. Package Outline Drawings 9. Related Information 10. Ordering Information 11. Revision History