Datasheet TP65B110HRU (Renesas) - 5
| 制造商 | Renesas |
| 描述 | 650V 110mΩ High-Voltage GaN Bidirectional Switch in TOLT Package |
| 页数 / 页 | 15 / 5 — TP65B110HRU Datasheet. 2.4. Gate Characteristics. Symbol. Parameter. Test … |
| 文件格式/大小 | PDF / 1.6 Mb |
| 文件语言 | 英语 |
TP65B110HRU Datasheet. 2.4. Gate Characteristics. Symbol. Parameter. Test Conditions. Minimum. Typical. Maximum. Unit. 2.5
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TP65B110HRU Datasheet 2.4 Gate Characteristics
TJ = 25°C, Opposite gate on at 9V, unless otherwise stated.
Symbol Parameter Test Conditions Minimum Typical Maximum Unit
VGS(th) Gate Threshold Voltage ISS = 0.5mA 2.6 3 3.4 V ΔVGS(th)/Tj Threshold Voltage Temperature Coefficient ISS = 0.5mA - -4 - mV/°C gm Gate Transconductance VSS = 20V, ISS = 10A - 35 - S QG Total Gate Charge - 6.8 - VGS = 0V to 7V QGS Gate-Source Charge VSS = 400V - 3 - nC ISS = 5A QGD Gate-Drain Charge - 1.5 - VGS = 9V - 0.1 1 VGS = -9V - 0.1 1 IG Gate-to-Source Leakage Current µA VGS = 20V - 6 - VGS = -20V - 6 - RG,int Internal Gate Resistor - - 1.8 - Ω
2.5 On-State Characteristics
TJ = 25°C unless otherwise stated.
Symbol Parameter Test Conditions Minimum Typical Maximum Unit
Both gates on (VG1S1 = 9V, VG2S2 = 9V) - 110 140 mΩ ISS = 10A RSS,on On-State Resistance between S1 and S2 Both gates on (VG1S1 = 9V, VG2S2 = 9V) - 230 - mΩ ISS = 10A, TJ = 150°C
2.6 Off-State Characteristics
TJ = 25°C unless otherwise stated.
Symbol Parameter Test Conditions Minimum Typical Maximum Unit
VSS = ±650V VG1S1 = 0V, VG2S2 = 0V - ±2 ±20 µA ISS,OFF Off-State Source Leakage Current VSS = ±650V VG1S1 = 0V, VG2S2 = 0V - ±20 - µA TJ = 150°C R07DS1683EU0100 Rev.1.00 Page 5 Mar 10, 2026 Document Outline 1. Pin Information 1.1 Pin Assignments 1.2 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Specifications 2.3 Recommended Operating Conditions 2.4 Gate Characteristics 2.5 On-State Characteristics 2.6 Off-State Characteristics 2.7 Dynamic Characteristics 2.8 Diode Characteristics 3. Typical Characteristics 4. Test Circuits and Waveforms 5. Modes of Operation 6. Device Architecture 7. Design Considerations 8. Package Outline Drawings 9. Related Information 10. Ordering Information 11. Revision History
TJ = 25°C, Opposite gate on at 9V, unless otherwise stated.
Symbol Parameter Test Conditions Minimum Typical Maximum Unit
VGS(th) Gate Threshold Voltage ISS = 0.5mA 2.6 3 3.4 V ΔVGS(th)/Tj Threshold Voltage Temperature Coefficient ISS = 0.5mA - -4 - mV/°C gm Gate Transconductance VSS = 20V, ISS = 10A - 35 - S QG Total Gate Charge - 6.8 - VGS = 0V to 7V QGS Gate-Source Charge VSS = 400V - 3 - nC ISS = 5A QGD Gate-Drain Charge - 1.5 - VGS = 9V - 0.1 1 VGS = -9V - 0.1 1 IG Gate-to-Source Leakage Current µA VGS = 20V - 6 - VGS = -20V - 6 - RG,int Internal Gate Resistor - - 1.8 - Ω
2.5 On-State Characteristics
TJ = 25°C unless otherwise stated.
Symbol Parameter Test Conditions Minimum Typical Maximum Unit
Both gates on (VG1S1 = 9V, VG2S2 = 9V) - 110 140 mΩ ISS = 10A RSS,on On-State Resistance between S1 and S2 Both gates on (VG1S1 = 9V, VG2S2 = 9V) - 230 - mΩ ISS = 10A, TJ = 150°C
2.6 Off-State Characteristics
TJ = 25°C unless otherwise stated.
Symbol Parameter Test Conditions Minimum Typical Maximum Unit
VSS = ±650V VG1S1 = 0V, VG2S2 = 0V - ±2 ±20 µA ISS,OFF Off-State Source Leakage Current VSS = ±650V VG1S1 = 0V, VG2S2 = 0V - ±20 - µA TJ = 150°C R07DS1683EU0100 Rev.1.00 Page 5 Mar 10, 2026 Document Outline 1. Pin Information 1.1 Pin Assignments 1.2 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Specifications 2.3 Recommended Operating Conditions 2.4 Gate Characteristics 2.5 On-State Characteristics 2.6 Off-State Characteristics 2.7 Dynamic Characteristics 2.8 Diode Characteristics 3. Typical Characteristics 4. Test Circuits and Waveforms 5. Modes of Operation 6. Device Architecture 7. Design Considerations 8. Package Outline Drawings 9. Related Information 10. Ordering Information 11. Revision History