Datasheet BSS316N (Infineon) - 6
| 制造商 | Infineon |
| 描述 | N-Channel Small Signal MOSFET 30 V in SOT-23 package |
| 页数 / 页 | 9 / 6 — BSS316N. 9 Drain-source on-state resistance. 10 Typ. gate threshold … |
| 文件格式/大小 | PDF / 237 Kb |
| 文件语言 | 英语 |
BSS316N. 9 Drain-source on-state resistance. 10 Typ. gate threshold voltage. 300. 2.8. 2.4. 250. 200. 1.6. [V]. 150. (th). (on). S G. 1.2. 100. 0.8. 0.4
该数据表的模型线
文件文字版本
BSS316N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=1.4 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=3.7 µA parameter: I D
300 2.8 2.4 250 2
98 %
200 ]
98 % Ω typ
1.6 [m [V] 150 (th) (on) S G DS
2 % typ
R V 1.2 100 0.8 50 0.4 0 0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j
102 101
Ciss Coss 25 °C
100
150 °C
101 [pF]
[A]
10-1 C
I F Crss 150 °C, 98%
10-2
25 °C, 98%
100 10-3 0 5 10 15 20 0 0.4 0.8 1.2 1.6 V DS [V] V SD [V]
Rev 2.3 page 6 2011-07-06
R DS(on)=f(T j); I D=1.4 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=3.7 µA parameter: I D
300 2.8 2.4 250 2
98 %
200 ]
98 % Ω typ
1.6 [m [V] 150 (th) (on) S G DS
2 % typ
R V 1.2 100 0.8 50 0.4 0 0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j
102 101
Ciss Coss 25 °C
100
150 °C
101 [pF]
[A]
10-1 C
I F Crss 150 °C, 98%
10-2
25 °C, 98%
100 10-3 0 5 10 15 20 0 0.4 0.8 1.2 1.6 V DS [V] V SD [V]
Rev 2.3 page 6 2011-07-06