Datasheet BSS316N (Infineon) - 5
| 制造商 | Infineon |
| 描述 | N-Channel Small Signal MOSFET 30 V in SOT-23 package |
| 页数 / 页 | 9 / 5 — BSS316N. 5 Typ. output characteristics. 6 Typ. drain-source on … |
| 文件格式/大小 | PDF / 237 Kb |
| 文件语言 | 英语 |
BSS316N. 5 Typ. output characteristics. 6 Typ. drain-source on resistance. 400. 350. 300. 250. 200. (on). 150. 100. 0.5. 1.5. 2.5. D [A]
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BSS316N 5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS
4 400 350
10 V 4.5 V 4 V
3 300
3.5 V
250 ]
4 V Ω ] [A
2 [m
4.5 V
200
I D
(on)
5 V
DS R
3.5 V
150
7 V 10 V 3.3 V
1 100
3 V
50
2.8 V
0 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4
V
I
DS [V]
D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
4 6 3 4 ] 2 [S [A] fs I D g 2 1
150 °C 25 °C
0 0 0 1 2 3 4 5 0 2 4 6 8 V I GS [V] D [A]
Rev 2.3 page 5 2011-07-06
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS
4 400 350
10 V 4.5 V 4 V
3 300
3.5 V
250 ]
4 V Ω ] [A
2 [m
4.5 V
200
I D
(on)
5 V
DS R
3.5 V
150
7 V 10 V 3.3 V
1 100
3 V
50
2.8 V
0 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4
V
I
DS [V]
D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
4 6 3 4 ] 2 [S [A] fs I D g 2 1
150 °C 25 °C
0 0 0 1 2 3 4 5 0 2 4 6 8 V I GS [V] D [A]
Rev 2.3 page 5 2011-07-06