Datasheet BSS316N (Infineon)
| 制造商 | Infineon |
| 描述 | N-Channel Small Signal MOSFET 30 V in SOT-23 package |
| 页数 / 页 | 9 / 1 — BSS316N. OptiMOS™2 Small-Signal-Transistor. Product Summary. Features. … |
| 文件格式/大小 | PDF / 237 Kb |
| 文件语言 | 英语 |
BSS316N. OptiMOS™2 Small-Signal-Transistor. Product Summary. Features. Type. Package. Tape and Reel Information. Marking. Lead Free
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文件文字版本
BSS316N OptiMOS™2 Small-Signal-Transistor Product Summary Features
V DS 30 V • N-channel R DS(on),max V GS=10 V 160 mΩ • Enhancement mode V GS=4.5 V 280 • Logic level (4.5V rated) I D 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23 • 100%lead-free; RoHS compliant 3 • Halogen-free according to IEC61249-2-21 1 2
Type Package Tape and Reel Information Marking Lead Free Packing
BSS316N SOT23 H6327: 3000 pcs/ reel SYs Yes Non dry
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D T A=25 °C 1.4 A T A=70 °C 1.1 Pulsed drain current I D,pulse T A=25 °C 5.6 Avalanche energy, single pulse E AS I D=1.4 A, R GS=25 Ω 3.7 mJ I D=1.4 A, V DS=16 V, Reverse diode dv /dt dv /dt di /dt =200 A/µs, 6 kV/µs T j,max=150 °C Gate source voltage V GS ±20 V Power dissipation P tot T A=25 °C 0.5 W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Rev 2.3 page 1 2011-07-06
V DS 30 V • N-channel R DS(on),max V GS=10 V 160 mΩ • Enhancement mode V GS=4.5 V 280 • Logic level (4.5V rated) I D 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23 • 100%lead-free; RoHS compliant 3 • Halogen-free according to IEC61249-2-21 1 2
Type Package Tape and Reel Information Marking Lead Free Packing
BSS316N SOT23 H6327: 3000 pcs/ reel SYs Yes Non dry
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D T A=25 °C 1.4 A T A=70 °C 1.1 Pulsed drain current I D,pulse T A=25 °C 5.6 Avalanche energy, single pulse E AS I D=1.4 A, R GS=25 Ω 3.7 mJ I D=1.4 A, V DS=16 V, Reverse diode dv /dt dv /dt di /dt =200 A/µs, 6 kV/µs T j,max=150 °C Gate source voltage V GS ±20 V Power dissipation P tot T A=25 °C 0.5 W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Rev 2.3 page 1 2011-07-06