Datasheet BSS316N (Infineon) - 2

BSS316N Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics
Thermal resistance, R junction - ambient thJA minimal footprint 1) - - 250 K/W
Electrical characteristics,
at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 30 - - V Gate threshold voltage V GS(th) V DS=VGS , I D=3.7 µA 1.2 1.6 2.0 V Drain-source leakage current DS=30 V, V GS=0 V, I DSS - - 1 μA T j=25 °C V DS=30 V, V GS=0 V, - - 100 T j=150 °C Gate-source leakage current I GSS V GS=30 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=1.1 A - 191 280 mΩ V GS=10 V, I D=1.4 A - 119 160 |V Transconductance DS|>2|I D|R DS(on)max, g fs 2.3 - S I D=1.1 A 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. Rev 2.3 page 2 2011-07-06