Datasheet J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 (ON Semiconductor) - 3

J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 TYPICAL PERFORMANCE CHARACTERISTICS
r ) DS 10 W 100 100 , DRAIN “ON” RESIST V T GS = 0 V A = 25°C f − 0.2 V TYP VGS(off) = −2.0 V DS 8 50 50 − 0.4 V ANECE (m 6 − 0.6 V 20 20 g 4 fs − 0.8 V IDSS, gfs @ VDS = 15 V, ANCE (m V − 1.0 V GS = 0 PULSED 2 10 10 r , DRAIN CURRENT (mA) DS @ 1.0 mA, VGS = 0 − 1.4 V − 1.2 V V I D GS(off) @ VDS = 15 V, TRANSCONDUCT I I DSS D = 1.0 nA 0 5 _ 5 _ _ _ _ W 0 0.4 0.8 1.2 1.6 2 g fs 0.5 1 2 5 10 ) VDS, DRAIN−SOURCE VOLTAGE (V) VGS(OFF), GATE CUTOFF VOLTAGE (V)
Figure 1. Common Drain−Source Figure 2. Parameter Interactions
40 16 VGS(off) = −3.0 V V VDS = 15 V GS(off) = −1.6 V − 55°C − 55°C 25°C 25 30 °C 125°C 12 125°C VGS(off) = −2.0 V 125°C 20 25°C 8 V − 55°C GS(off) = −1.1 V − 55°C 25°C 10 4 125°C , DRAIN CURRENT (mA) VDS = 15 V , DRAIN CURRENT (mA) I D I D 0 0 0 −1 −2 −3 0 −0.5 −1 −1.5 VGS, GATE−SOURCE VOLTAGE (V) VGS, GATE−SOURCE VOLTAGE (V)
Figure 3. Transfer Characteristics Figure 4. Transfer Characteristics
) W 30 W 30 VGS(off) = −3.0 V − 55°C V 25°C GS(off) = −1.6 V 125°C − 55°C ANECE (m 20 ANECE (m 20 25°C VGS(off) = −2.0 V 125°C − 55°C 25°C 125°C VGS(off) = −1.1 V 10 10 − 55°C 25°C 125°C V V , TRANSCONDUCT DS = 15 V , TRANSCONDUCT DS = 15 V 0 0 g fs 0 −1 −2 −3 g fs 0 −0.5 −1 −1.5 VGS, GATE−SOURCE VOLTAGE (V) VGS, GATE−SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics www.onsemi.com 3