Datasheet J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 (ON Semiconductor) - 5

J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 TYPICAL PERFORMANCE CHARACTERISTICS
(CONTINUED) 100 700 VDG = 15 V √Hz) 600 TO−92 f = 10 Hz 500 f = 100 Hz ATION (mW) f = 1.0 kHz 400 SOT−23 TAGE (nV / 10 300 200 f = 10 kHz f = 100 kHz 100 , NOICE VOL , POWER DISSIP e n 1 P D 0 0.01 0.1 1 10 0 25 50 75 100 125 150 ID, DRAIN CURRENT (mA) TEMPERATURE (°C)
Figure 13. Noise Voltage vs. Current Figure 14. Power Dissipation vs. Ambient Temperature
25 100 VDD = 3.0 V TA = 25°C tr APPROX. ID INDEPENDENT VDD = 3.0 V VGS(off) = −2.2 V 20 tr(ON) VGS(off) = 3.0 V 80 VGS = −12 V TA = 25°C td(off) DEVICE − 4.0V t VGS(off) INDEPENDENT (off) 15 60 − 7.5V ID = 6.6 mA 10 VDG = 15 V , TURN ON TIME (ns) 2.5 mA 40 td(ON) , TURN OFF TIME (ns) − 6.0 V d(ON) OFF 5 20 , t , t td(off) t d(ON) 0 0 t d(OFF) 0 −2 −4 −6 −8 −10 0 2 4 6 8 10 VGS, GATE−SOURCE CUTOFF VOLTAGE (V) ID, DRAIN CURRENT (mA)
Figure 15. Switching Turn−On Time vs. Figure 16. Switching Turn−Off Time vs. Gate−Source Voltage Drain Current www.onsemi.com 5