Datasheet PMV65XP (Nexperia) - 8

Nexperia PMV65XP 20 V, single P-channel Trench MOSFET
017aaa846 -2.0 017aaa847 103 C V iss GS(th) (V) C -1.5 (pF) -1.0 102 max Coss C typ rss -0.5 min 0 10 -60 0 60 120 180 -10-1 -1 -102 -10 Tj (°C) VDS (V) ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances junction temperature as a function of drain-source voltage; typical values
017aaa848 -5 V VDS GS (V) -4 ID VGS(pl) -3 VGS(th) -2 VGS QGS1 QGS2 -1 QGS QGD QG(tot) 017aaa137 0 0 2.5 5.0 7.5 10.0
Fig. 15. Gate charge waveform definitions
QG (nC) ID = -2.8 A; VDS = -6 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate charge; typical values
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Product data sheet 12 February 2013 8 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information