Datasheet PMV65XP (Nexperia)
| 制造商 | Nexperia |
| 描述 | 20 V, single P-channel Trench MOSFET |
| 页数 / 页 | 14 / 1 — PMV65XP. 20 V, single P-channel Trench MOSFET. 12 February 2013. Product … |
| 修订版 | 04201705 |
| 文件格式/大小 | PDF / 742 Kb |
| 文件语言 | 英语 |
PMV65XP. 20 V, single P-channel Trench MOSFET. 12 February 2013. Product data sheet. 1. General description
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文件文字版本
PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage • Low on-state resistance • Trench MOSFET technology
3. Applications
• Low power DC-to-DC converters • Load switching • Battery management • Battery powered portable equipment
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tsp = 25 °C - - -4.3 A
Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 58 74 mΩ resistance Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage • Low on-state resistance • Trench MOSFET technology
3. Applications
• Low power DC-to-DC converters • Load switching • Battery management • Battery powered portable equipment
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tsp = 25 °C - - -4.3 A
Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 58 74 mΩ resistance Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information