Datasheet DMTH4008LFDFWQ (Diodes) - 3
| 制造商 | Diodes |
| 描述 | 40V +175?C N-Channel Enhancement Mode MOSFET |
| 页数 / 页 | 8 / 3 — DMTH4008LFDFWQ. Thermal Characteristics. Characteristic. Symbol. Value. … |
| 文件格式/大小 | PDF / 484 Kb |
| 文件语言 | 英语 |
DMTH4008LFDFWQ. Thermal Characteristics. Characteristic. Symbol. Value. Unit. Electrical Characteristics. Min. Typ. Max. Test Condition
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文件文字版本
DMTH4008LFDFWQ Thermal Characteristics Characteristic Symbol Value Unit
Total Power Dissipation (Note 7) TA = +25°C PD 0.99 W Thermal Resistance, Junction to Ambient (Note 7) Steady State RθJA 153 °C/W Total Power Dissipation (Note 5) TA = +25°C PD 2.35 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 64.5 °C/W Thermal Resistance, Junction to Case (Note 5) TC = +25°C RθJC 14.8 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS
(Note 8) Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 32V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
(Note 8) Gate Threshold Voltage VGS(TH) 1 1.7 3 V VDS = VGS, ID = 250μA VGS = 10V, ID = 10A Static Drain-Source On-Resistance RDS(ON) — 9.1 11.5 mΩ 12.9 18 VGS = 4.5V, ID = 8.5A Diode Forward Voltage VSD — 0.8 1.0 V VGS = 0V, IS = 10A
DYNAMIC CHARACTERISTICS
(Note 9) Input Capacitance Ciss — 1030 — V Output Capacitance Coss — 324 — pF DS = 20V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance Crss — 27 — Gate Resistance Rg — 1.82 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 6.8 — Total Gate Charge (VGS = 10V) Qg — 14.2 — nC VDD = 20V, ID = 10A Gate-Source Charge Qgs — 2.0 — Gate-Drain Charge Qgd — 2.7 — Turn-On Delay Time tD(ON) — 3.1 — Turn-On Rise Time tR — 3.1 — VDD = 20V, VGS = 10V, ns Turn-Off Delay Time tD(OFF) — 14.2 — Rg = 6Ω, ID = 10A Turn-Off Fall Time tF — 5.8 — Reverse-Recovery Time tRR — 19.6 — ns IF = 10A, di/dt = 100A/μs Reverse-Recovery Charge QRR — 8.2 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMTH4008LFDFWQ 3 of 8 May 2025 Document number: DS39771 Rev. 5 - 2
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© 2025 Copyright Diodes Incorporated. All Rights Reserved.
Total Power Dissipation (Note 7) TA = +25°C PD 0.99 W Thermal Resistance, Junction to Ambient (Note 7) Steady State RθJA 153 °C/W Total Power Dissipation (Note 5) TA = +25°C PD 2.35 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 64.5 °C/W Thermal Resistance, Junction to Case (Note 5) TC = +25°C RθJC 14.8 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS
(Note 8) Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 32V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
(Note 8) Gate Threshold Voltage VGS(TH) 1 1.7 3 V VDS = VGS, ID = 250μA VGS = 10V, ID = 10A Static Drain-Source On-Resistance RDS(ON) — 9.1 11.5 mΩ 12.9 18 VGS = 4.5V, ID = 8.5A Diode Forward Voltage VSD — 0.8 1.0 V VGS = 0V, IS = 10A
DYNAMIC CHARACTERISTICS
(Note 9) Input Capacitance Ciss — 1030 — V Output Capacitance Coss — 324 — pF DS = 20V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance Crss — 27 — Gate Resistance Rg — 1.82 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 6.8 — Total Gate Charge (VGS = 10V) Qg — 14.2 — nC VDD = 20V, ID = 10A Gate-Source Charge Qgs — 2.0 — Gate-Drain Charge Qgd — 2.7 — Turn-On Delay Time tD(ON) — 3.1 — Turn-On Rise Time tR — 3.1 — VDD = 20V, VGS = 10V, ns Turn-Off Delay Time tD(OFF) — 14.2 — Rg = 6Ω, ID = 10A Turn-Off Fall Time tF — 5.8 — Reverse-Recovery Time tRR — 19.6 — ns IF = 10A, di/dt = 100A/μs Reverse-Recovery Charge QRR — 8.2 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMTH4008LFDFWQ 3 of 8 May 2025 Document number: DS39771 Rev. 5 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.