Datasheet DMTH4008LFDFWQ (Diodes) - 2
| 制造商 | Diodes |
| 描述 | 40V +175?C N-Channel Enhancement Mode MOSFET |
| 页数 / 页 | 8 / 2 — DMTH4008LFDFWQ. Marking Information. Year. 2017. 2025. 2026. 2027. 2028. … |
| 文件格式/大小 | PDF / 484 Kb |
| 文件语言 | 英语 |
DMTH4008LFDFWQ. Marking Information. Year. 2017. 2025. 2026. 2027. 2028. 2029. 2030. 2031. 2032. 2033. 2034. Code. Month. Jan. Feb. Mar. Apr. May. Jun. Jul. Aug. Sep
该数据表的模型线
文件文字版本
DMTH4008LFDFWQ Marking Information
8W = Product Type Marking Code YM = Date Code Marking Y = Year (ex: M = 2025)
YM
M = Month (ex: 9 = September) DMTH4008LFDFWQ-7 DMTH4008LFDFWQ-13 8W = Product Type Marking Code YM = Date Code Marking Y = Year (ex: M = 2025) M = Month (ex: 9 = September) DMTH4008LFDFWQ-7R DMTH4008LFDFWQ-13R Date Code Key
Year 2017 - 2025 2026 2027 2028 2029 2030 2031 2032 2033 2034 Code
E - M N P R S T U V W X
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code
1 2 3 4 5 6 7 8 9 O N D
Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V TA = +25°C 11.6 Continuous Drain Current (Note 5) VGS = 10V ID A TA = +100°C 8.2 Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 80 A Continuous Source-Drain Diode Current (Note 5) IS 2.55 A Pulsed Source-Drain Diode Current (10μs Pulse, Duty Cycle = 1%) ISM 80 A Avalanche Current, L = 0.3mH (Note 6) IAS 14.7 A Avalanche Energy, L = 0.3mH (Note 6) EAS 32.4 mJ Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. DMTH4008LFDFWQ 2 of 8 May 2025 Document number: DS39771 Rev. 5 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.
8W = Product Type Marking Code YM = Date Code Marking Y = Year (ex: M = 2025)
YM
M = Month (ex: 9 = September) DMTH4008LFDFWQ-7 DMTH4008LFDFWQ-13 8W = Product Type Marking Code YM = Date Code Marking Y = Year (ex: M = 2025) M = Month (ex: 9 = September) DMTH4008LFDFWQ-7R DMTH4008LFDFWQ-13R Date Code Key
Year 2017 - 2025 2026 2027 2028 2029 2030 2031 2032 2033 2034 Code
E - M N P R S T U V W X
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code
1 2 3 4 5 6 7 8 9 O N D
Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V TA = +25°C 11.6 Continuous Drain Current (Note 5) VGS = 10V ID A TA = +100°C 8.2 Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 80 A Continuous Source-Drain Diode Current (Note 5) IS 2.55 A Pulsed Source-Drain Diode Current (10μs Pulse, Duty Cycle = 1%) ISM 80 A Avalanche Current, L = 0.3mH (Note 6) IAS 14.7 A Avalanche Energy, L = 0.3mH (Note 6) EAS 32.4 mJ Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. DMTH4008LFDFWQ 2 of 8 May 2025 Document number: DS39771 Rev. 5 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.