Datasheet DMTH4008LFDFWQ (Diodes) - 5

DMTH4008LFDFWQ
) 0.025 (Ω ) 2.4 V E ( C 2.2 N GE TA 0.02 TA 2 SI I = 1mA D S OL V 1.8 E V = 4.5V, I = 8.5A R GS D D - 0.015 1.6 OL ON H E S 1.4 I = 250μA C E D R R 1.2 0.01 OU TH S- E V = 10V, I = 10A 1 NI GS D A GAT R 0.005 0.8 , D H) , T( 0.6 GS ON)( V 0.4 DS 0 R -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 T TJ, JUNCTION TEMPERATURE (oC) J, JUNCTION TEMPERATURE (oC) Figure 8. Gate Threshold Variation vs. Junction Figure 7. On-Resistance Variation with Temperature Temperature 30 10000 f = 1MHz V = 0V GS F) 25 p C ) ( iss A( E 1000 C T N N 20 E TA R I C C R A oss U P C 15 100 A E C C R T = 85oC ON 10 A OU TI C S T = 125oC C A rss , N 10 T = 25oC I S A U T = 150oC J 5 A , T T = 175oC C A T = -55oC A 0 1 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40 V VDS, DRAIN-SOURCE VOLTAGE (V) SD, SOURCE-DRAIN VOLTAGE (V) Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 10 100 RDS(ON) P =100µs W Limited 8 ) A 10 ( T N 6 E ) R V( R U 1 P =1ms GS C W V NI P =10ms 4 V = 20V, I = 10A W DS D A R T = 175oC D J(Max) P =100ms W , T = 25oC 0.1 I D C P =1s 2 Single Pulse W DUT on 1*MRP P =10s W Board DC V = 10V GS 0 0.01 0 2 4 6 8 10 12 14 16 0.01 0.1 1 10 100 Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area DMTH4008LFDFWQ 5 of 8 May 2025 Document number: DS39771 Rev. 5 - 2
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