Datasheet FGD3050G2V (ON Semiconductor) - 4
| 制造商 | ON Semiconductor |
| 描述 | Ignition IGBT, 500V, 27A, 1.3V, 300mJ, DPAK EcoSPARK II, N-Channel Ignition |
| 页数 / 页 | 9 / 4 — FGD3050G2V. TYPICAL CHARACTERISTICS. Figure 7. Collector to Emitter … |
| 文件格式/大小 | PDF / 602 Kb |
| 文件语言 | 英语 |
FGD3050G2V. TYPICAL CHARACTERISTICS. Figure 7. Collector to Emitter On−State Voltage vs. Figure 8. Transfer Characteristics
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FGD3050G2V TYPICAL CHARACTERISTICS
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Figure 7. Collector to Emitter On−State Voltage vs. Figure 8. Transfer Characteristics Collector Current Figure 9. DC Collector Current vs. Case Figure 10. Gate Charge Temperature Figure 11. Threshold Voltage vs. Junction Figure 12. Leakage Current vs. Junction Temperature Temperature Temperature www.onsemi.com 4
(continued)
Figure 7. Collector to Emitter On−State Voltage vs. Figure 8. Transfer Characteristics Collector Current Figure 9. DC Collector Current vs. Case Figure 10. Gate Charge Temperature Figure 11. Threshold Voltage vs. Junction Figure 12. Leakage Current vs. Junction Temperature Temperature Temperature www.onsemi.com 4