Datasheet PSMN9R0-30YL (Nexperia) - 2
| 制造商 | Nexperia |
| 描述 | N-channel 30 V 8 mΩ logic level MOSFET in LFPAK |
| 页数 / 页 | 14 / 2 — NXP Semiconductors. PSMN9R0-30YL. N-channel 30 V 8 mΩ logic level MOSFET … |
| 修订版 | 10201103 |
| 文件格式/大小 | PDF / 394 Kb |
| 文件语言 | 英语 |
NXP Semiconductors. PSMN9R0-30YL. N-channel 30 V 8 mΩ logic level MOSFET in LFPAK. Pinning information. Table 2. Pin. Symbol
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NXP Semiconductors PSMN9R0-30YL N-channel 30 V 8 mΩ logic level MOSFET in LFPAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 S source mb D 2 S source 3 S source G 4 G gate mb D mounting base; connected to mbb076 S drain 1 2 3 4
SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version
PSMN9R0-30YL LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
4. Limiting values Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 30 V VDSM peak drain-source voltage tp ≤ 25 ns; f ≤ 500 kHz; EDS(AL) ≤ 80 nJ; - 35 V pulsed VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tmb = 100 °C; see Figure 1 - 43 A VGS = 10 V; Tmb = 25 °C; see Figure 1; - 61 A see Figure 3 IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; - 223 A see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 46 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C
Source-drain diode
IS source current Tmb = 25 °C - 55 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 223 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; - 16 mJ avalanche energy Vsup ≤ 30 V; RGS = 50 Ω; unclamped PSMN9R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 9 March 2011 2 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents
NXP Semiconductors PSMN9R0-30YL N-channel 30 V 8 mΩ logic level MOSFET in LFPAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 S source mb D 2 S source 3 S source G 4 G gate mb D mounting base; connected to mbb076 S drain 1 2 3 4
SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version
PSMN9R0-30YL LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
4. Limiting values Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 30 V VDSM peak drain-source voltage tp ≤ 25 ns; f ≤ 500 kHz; EDS(AL) ≤ 80 nJ; - 35 V pulsed VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tmb = 100 °C; see Figure 1 - 43 A VGS = 10 V; Tmb = 25 °C; see Figure 1; - 61 A see Figure 3 IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; - 223 A see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 46 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C
Source-drain diode
IS source current Tmb = 25 °C - 55 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 223 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; - 16 mJ avalanche energy Vsup ≤ 30 V; RGS = 50 Ω; unclamped PSMN9R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 9 March 2011 2 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents