Datasheet HMC-APH634 (Analog Devices) - 3

HMC-APH634
v01.0713
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Absolute Maximum Ratings
Drain Bias Voltage +4.5V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Gate Bias Voltage -0.8 to +0.3V RF Input 13 dBm DO NOT EXPOSE PRODUCT TO Thermal Resistance 61.6 °C/W (Channel to die bottom) CONDENSING MOISTURE WHILE UNDER OPERATION. Channel Temperature 180 °C Storage Temperature -65 °C to +150 °C IP H Operating Temperature -55 °C to +85 °C Drain Bias Current (Idd1) 100mA Drain Bias Current (Idd2) 200mA S - C R
Outline Drawing
IE LIF P M R A E W O R & P A E LIN NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. BACKSIDE METALLIZATION: GOLD. Standard Alternate 3. BACKSIDE METAL IS GROUND. GP-1 (Gel Pack) [2] 4. BOND PAD METALLIZATION: GOLD. [1] Refer to the “Packaging Information” section for die 5. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. packaging dimensions. 6. OVERALL DIE SIZE ±.002” [2] For alternate packaging information contact Hittite Microwave Corporation. Information furnish F ed obr p y Anrialc o e g , d Devi e ce lis vie s breyli, a eve nd t d to b o p e acc luaracte o e and rd reliearblse, p . Ho le we a vers, e c no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ontact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
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2 Elizabeth Drive, Chelmsford, MA 01824 Phon rights of third parties that may result from its use. Specifications subject to change without notice. No e: 9 Ph 7 on 8 e -2 : 7 5 81 0 -3-3 29 3 - 4 47 3 F 0 a 0 • O x: 9 rde 7 r o 8 nli - n 25 e a 0 t -3 ww 3 w 7 .a3 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. nalog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A itptpitlie c . atcio o m n Support: Phone: 1-800-ANALOG-D