Datasheet HMC-APH634 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 -86 GHz |
| 页数 / 页 | 6 / 1 — HMC-APH634. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 81 - 86 GHz. Typical … |
| 文件格式/大小 | PDF / 302 Kb |
| 文件语言 | 英语 |
HMC-APH634. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 81 - 86 GHz. Typical Applications. Features. Functional Diagram
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HMC-APH634
v01.0713
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features
This HMC-APH634 is ideal for: High Gain: 12 dB • Short Haul / High Capacity Links High P1dB: +19 dBm • Test & Measurement Bias Supply: +4V • E-Band Communication Systems 50 Ohm Matched Input/Output Die Size: 2.57 x 1.70 x 0.05 mm IP H S - C
Functional Diagram General Description
R The HMC-APH634 is a two stage GaAs HEMT MMIC IE Medium Power Amplifier which operates between 81 and 86 GHz. The HMC-APH634 provides 12 LIF P dB of gain, and an output power of up to +20 dBm at 1 dB compression from a +4V supply. All bond M pads and the die backside are Ti/Au metal ized. The HMC-APH634 GaAs HEMT MMIC Medium R A Power Amplifier is compatible with conven- E tional die attach methods, as well as thermocomp- W ression and thermosonic wire bonding, making it O ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E LIN
Electrical Specifications, T = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240mA
[2]
A
Parameter Min. Typ. Max. Units Frequency Range 81 - 86 GHz Gain 7 12 dB Input Return Loss 7 dB Output Return Loss 8 dB Output power for 1dB Compression (P1dB) 19 dBm Supply Current (Idd1+Idd2) 240 mA [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1=Vgg2 between -0.8V to +0.3V (typ. -0.1V) to achieve Iddtotal = 240mA Information furnish F ed obr p y Anrialc o e g , d Devi e ce lis vie s breyli, a eve nd t d to b o p e acc luaracte o e and rd reliearblse, p . Ho le we a vers, e c no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ontact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
2 Elizabeth Drive, Chelmsford, MA 01824 Phon rights of third parties that may result from its use. Specifications subject to change without notice. No e: 9 Ph 7 on 8 e -2 : 7 5 81 0 -3-3 29 3 - 4 47 3 F 0 a 0 • O x: 9 rde 7 r o 8 nli - n 25 e a 0 t -3 ww 3 w 7 .a3 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. nalog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A itptpitlie c . atcio o m n Support: Phone: 1-800-ANALOG-D
v01.0713
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features
This HMC-APH634 is ideal for: High Gain: 12 dB • Short Haul / High Capacity Links High P1dB: +19 dBm • Test & Measurement Bias Supply: +4V • E-Band Communication Systems 50 Ohm Matched Input/Output Die Size: 2.57 x 1.70 x 0.05 mm IP H S - C
Functional Diagram General Description
R The HMC-APH634 is a two stage GaAs HEMT MMIC IE Medium Power Amplifier which operates between 81 and 86 GHz. The HMC-APH634 provides 12 LIF P dB of gain, and an output power of up to +20 dBm at 1 dB compression from a +4V supply. All bond M pads and the die backside are Ti/Au metal ized. The HMC-APH634 GaAs HEMT MMIC Medium R A Power Amplifier is compatible with conven- E tional die attach methods, as well as thermocomp- W ression and thermosonic wire bonding, making it O ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E LIN
Electrical Specifications, T = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240mA
[2]
A
Parameter Min. Typ. Max. Units Frequency Range 81 - 86 GHz Gain 7 12 dB Input Return Loss 7 dB Output Return Loss 8 dB Output power for 1dB Compression (P1dB) 19 dBm Supply Current (Idd1+Idd2) 240 mA [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1=Vgg2 between -0.8V to +0.3V (typ. -0.1V) to achieve Iddtotal = 240mA Information furnish F ed obr p y Anrialc o e g , d Devi e ce lis vie s breyli, a eve nd t d to b o p e acc luaracte o e and rd reliearblse, p . Ho le we a vers, e c no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ontact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
2 Elizabeth Drive, Chelmsford, MA 01824 Phon rights of third parties that may result from its use. Specifications subject to change without notice. No e: 9 Ph 7 on 8 e -2 : 7 5 81 0 -3-3 29 3 - 4 47 3 F 0 a 0 • O x: 9 rde 7 r o 8 nli - n 25 e a 0 t -3 ww 3 w 7 .a3 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. nalog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A itptpitlie c . atcio o m n Support: Phone: 1-800-ANALOG-D