Datasheet Texas Instruments CSD17313Q2 — 数据表

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SLPS260E – MARCH 2010 – REVISED SEPTEMBER 2015 CSD17313Q2 30-V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Optimized for 5-V Gate Drive
Ultra-Low Qg and Qgd
Low Thermal Resistance
Pb-Free
RoHS Compliant
Halogen-Free
SON 2-mm Г— 2-mm Plastic Package TA = 25В°C TYPICAL VALUE Drain-to-Source Voltage 30 V Qg Gate Charge Total (4.5 V) 2.1 nC Qgd Gate Charge Gate-to-Drain RDS(on)
VGS(th) Drain-to-Source On
Resistance PART NUMBER 3 Description
This 30-V, 24-mО©, 2-mm x 2-mm SON NexFETв„ў
power MOSFET is designed to minimize losses in
power conversion applications and optimized for 5-V
gate drive applications. The 2-mm Г— 2-mm SON
offers excellent thermal performance for the size of
the package. G 3 S 4 mΩ 24 mΩ 1.3 V MEDIA 3000 13-Inch Reel
250 7-Inch Reel PACKAGE SHIP SON 2-mm Г— 2-mm …