Datasheet Texas Instruments CSD17313Q2 — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD17313Q2 |
30V N沟道NexFET –功率MOSFET
数据表
CSD17313Q2 30-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 406 Kb, 修订版: E, 档案已发布: Sep 30, 2015
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价格
状态
| CSD17313Q2 | CSD17313Q2T | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
打包
| CSD17313Q2 | CSD17313Q2T | |
|---|---|---|
| N | 1 | 2 |
| Pin | 6 | 6 |
| Package Type | DQK | DQK |
| Package QTY | 3000 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 1733 | 1733 |
| Width (mm) | 2 | 2 |
| Length (mm) | 2 | 2 |
| Thickness (mm) | .75 | .75 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD17313Q2 | CSD17313Q2T |
|---|---|---|
| Configuration | Single | Single |
| IDM, Max Pulsed Drain Current(Max), A | 20 | 20 |
| Package, mm | SON2x2 | SON2x2 |
| QG Typ, nC | 2.1 | 2.1 |
| QGD Typ, nC | 0.4 | 0.4 |
| RDS(on) Typ at VGS=4.5V, mOhm | 26 | 26 |
| Rds(on) Max at VGS=4.5V, mOhms | 32 | 32 |
| VDS, V | 30 | 30 |
| VGS, V | 10 | 10 |
| VGSTH Typ, V | 1.3 | 1.3 |
生态计划
| CSD17313Q2 | CSD17313Q2T | |
|---|---|---|
| RoHS | Compliant | Compliant |
应用须知
- Power Solution for the IntelВ® Atomв„ў E6X5CPDF, 27 Kb, 档案已发布: Jun 29, 2011
Power Solution for the IntelВ® Atomв„ў E6x5x - Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD17313Q2 (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor