Datasheet Inchange Semiconductor IXFH26N50 — 数据表

isc N-Channel MOSFET Transistor IXFH26N50 FEATURES Drain Current : ID= 26A@ TC=25℃ Drain Source Voltage
: VDSS= 500V(Min) Static Drain-Source On-Resistance
: RDS(on) = 0.2Ω(Max) @ VGS= 10V 100% avalanche tested Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 26 A IDM Drain Current-Single Pluse 104 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature -55~150 ℃ Storage Temperature -55~150 ℃ Tstg THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.42 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXFH26N50 ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)DSS PARAMETER CONDITIONS MIN MAX UNIT Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 500 -V VGS(th) Gate Threshold Voltage VDS= 10V; ID= 4mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 13A -0.2 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 -±0.1 uA IDSS Zero Gate Voltage Drain Current VDS= 400V; VGS= 0 -200 uA VSD Forward On-Voltage IS= 26A; VGS= 0 -1.5 V NOTICE：
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incidental damages. isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark …