Datasheet IXFH26N50 (Inchange Semiconductor)
| 制造商 | Inchange Semiconductor |
| 描述 | N-Channel MOSFET Transistor in TO-247 package |
| 页数 / 页 | 2 / 1 — isc N-Channel MOSFET Transistor. IXFH26N50. FEATURES. DESCRIPTION. … |
| 文件格式/大小 | PDF / 396 Kb |
| 文件语言 | 英语 |
isc N-Channel MOSFET Transistor. IXFH26N50. FEATURES. DESCRIPTION. ABSOLUTE MAXIMUM RATINGS(Ta=25. SYMBOL. PARAMETER. VALUE. UNIT
该数据表的模型线
文件文字版本
isc N-Channel MOSFET Transistor IXFH26N50 FEATURES
·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃
) SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 26 A IDM Drain Current-Single Pluse 104 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.42 ℃/W
isc website
：
www.iscsemi.com
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Document Outline isc N-Channel MOSFET Transistor I FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ELECTRICAL CHARACTERISTICS
·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃
) SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 26 A IDM Drain Current-Single Pluse 104 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.42 ℃/W
isc website
：
www.iscsemi.com
1
isc & iscsemi is registered trademark
Document Outline isc N-Channel MOSFET Transistor I FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ELECTRICAL CHARACTERISTICS