Datasheet ON Semiconductor FDN340P — 数据表

DATA SHEET
www.onsemi.com MOSFET – Single, P-Channel,
POWERTRENCH), Logic
Level
FDN340P SOT−23
CASE 527AG D General Description This P−Channel Logic Level MOSFET is produced using onsemi
advanced POWERTRENCH process that has been especially tailored
to minimize the on−state resistance and yet maintain low gate charge
for superior switching performance.
These devices are well suited for portable electronics applications:
load switching and power management, battery charging circuits, and
dc−dc conversion. G S MARKING DIAGRAM Features Drain
3 • −2 A, 20 V RDS(ON) = 70 mW @ VGS = −4.5 V
RDS(ON) = 110 mW @ VGS = −2.5 V
Low Gate Charge (7.2 nC Typical)
High Performance Trench Technology for Extremely Low RDS(ON)
High Power Version of Industry Standard SOT−23 Package. Identical
Pin−Out to SOT−23 with 30% Higher Power Handling Capability
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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