Features Description •
•
•
• These N-channel enhancement mode field effect transistors are produced using ON Semiconductor's
proprietary, high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while providing rugged, reliable, and fast
switching performance. They can be used in most
applications requiring up to 400 mA DC and can deliver
pulsed currents up to 2 A. These products are
particularly
suited
for
low-voltage,
low-cur-rent
applications, such as small servo motor control,
power MOSFET gate drivers, and other switching applications. High Density Cell Design for Low RDS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability D
D S TO-92 1 1. Source 2. Gate 3. Drain G G SOT-23
(TO-236AB) S 2N7002/NDS7002A Ordering Information
Part Number Marking Package Packing Method Min Order Qty /
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