Datasheet ON Semiconductor FDN302P — 数据表

FDN302P FDN302P
P-Channel 2.5V Specified PowerTrenchп›љ MOSFET
General Description Features This P-Channel 2.5V specified MOSFET uses a rugged
gate version of ON’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V). –20 V, –2.4 A. RDS(ON) = 0.055 Ω @ VGS = –4.5 V
RDS(ON) = 0.080 Ω @ VGS = –2.5 V Fast switching speed High performance trench technology for extremely
low RDS(ON) Applications Power management SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint Load switch Battery protection D D S
S G
TM SuperSOT -3 G Absolute Maximum Ratings
Symbol TA=25oC unless otherwise noted Drain-Source Voltage Ratings
–20 Units VDSS Parameter VGSS Gate-Source Voltage ±12 V ID Drain Current (Note 1a) –2.4
–10 A (Note 1a) 0.5 W – Continuous
– Pulsed PD Maximum Power Dissipation (Note 1b) TJ, TSTG V 0.46 –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics
RОёJA Thermal Resistance, Junction-to-Ambient RОёJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity 302 FDN302P 7’’ 8mm 3000 units 2000 Semiconductor Components Industries, LLC.
October-2017, Rev. 3 Publication Order Number:
FDN302P/D Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –12 mV/°C Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS
===∆TJ …