Datasheet Microchip DN3765K4-G — 数据表

Supertex inc. DN3765
N-Channel Depletion-Mode
Vertical DMOS FET Features
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►► General Description High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage This depletion-mode (normally-on) transistor utilizes an
advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown. Applications
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