Datasheet Texas Instruments CSD85302L — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD85302L |

20 V双N沟道NexFET功率MOSFET
数据表
CSD85302L 20 V Dual N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 413 Kb, 档案已发布: Nov 19, 2015
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状态
| CSD85302L | CSD85302LT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
打包
| CSD85302L | CSD85302LT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 4 | 4 |
| Package Type | YME | YME |
| Package QTY | 3000 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 85302 | 85302 |
| Width (mm) | 1.35 | 1.35 |
| Length (mm) | 1.35 | 1.35 |
| Thickness (mm) | .2 | .2 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD85302L![]() | CSD85302LT![]() |
|---|---|---|
| Configuration | Dual Common Drain | Dual Common Drain |
| IDM, Max Pulsed Drain Current(Max), A | 37 | 37 |
| Package, mm | LGA 1.35x1.35 | LGA 1.35x1.35 |
| QG Typ, nC | 6.0 | 6.0 |
| QGD Typ, nC | 1.4 | 1.4 |
| RDS(on) Typ at VGS=4.5V, mOhm | 20 | 20 |
| Rds(on) Max at VGS=4.5V, mOhms | 24 | 24 |
| VDS, V | 20 | 20 |
| VGS, V | 10 | 10 |
| VGSTH Typ, V | 0.90 | 0.90 |
生态计划
| CSD85302L | CSD85302LT | |
|---|---|---|
| RoHS | Compliant | Compliant |
模型线
系列: CSD85302L (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor