Datasheet Texas Instruments CSD85302L — 数据表

制造商Texas Instruments
系列CSD85302L
零件号CSD85302L
Datasheet Texas Instruments CSD85302L

20 V双N沟道NexFET功率MOSFET 4-PICOSTAR -55至150

数据表

CSD85302L 20 V Dual N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 413 Kb, 档案已发布: Nov 19, 2015
从文件中提取

价格

状态

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

打包

Pin4
Package TypeYME
Package QTY3000
CarrierLARGE T&R
Device Marking85302
Width (mm)1.35
Length (mm)1.35
Thickness (mm).2
Mechanical Data下载

参数化

ConfigurationDual Common Drain
IDM, Max Pulsed Drain Current(Max)37 A
PackageLGA 1.35x1.35 mm
QG Typ6.0 nC
QGD Typ1.4 nC
RDS(on) Typ at VGS=4.5V20 mOhm
Rds(on) Max at VGS=4.5V24 mOhms
VDS20 V
VGS10 V
VGSTH Typ0.90 V

生态计划

RoHSCompliant

模型线

系列: CSD85302L (2)

制造商分类

  • Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor